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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1732-1736
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High hole and electron mobilities in nanocrystalline silicon thin-film transistors
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Author keywords
Microcrystallinity; Plasma deposition; Thin film transistors
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
NANOSTRUCTURED MATERIALS;
PLASMAS;
SILICON;
THIN FILM TRANSISTORS;
THIN FILMS;
MICROCRYSTALLINITY;
PLASMA DEPOSITION;
ELECTRON MOBILITY;
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EID: 33744510029
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.11.149 Document Type: Article |
Times cited : (17)
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References (20)
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