Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

Journal of Applied Physics

Volumn 114, Issue 12, 2013, Pages

  Cumpson, Peter J ^a   Portoles, Jose F ^a   Barlow, Anders J ^a   Sano, Naoko ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ESTERS; ION BEAMS; IONS; KINETIC ENERGY; KINETICS; PHOTOELECTRONS; PHOTONS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SILICA; SPUTTERING; SURFACE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EMPIRICAL MODEL; EQUATION BASED; LEAST SQUARES FIT; NEAR THRESHOLDS; QUANTITATIVE MODELING; SIMPLE MODELING; SPUTTER-DEPTH PROFILING; THREE PARAMETERS;

DEPTH PROFILING;

EID: 84885411570     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4823815     Document Type: Article

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