An electronic structure reinterpretation of the organic semiconductor/electrode interface based on argon gas cluster ion beam sputtering investigations

Journal of Applied Physics

Volumn 114, Issue 1, 2013, Pages

  Yun, Dong Jin ^a   Chung, Jaegwan ^a   Jung, Changhoon ^a   Kim, Ki Hong ^a   Baek, Woonjoong ^a   Han, Hyouksoo ^a   Anass, Benayad ^a   Park, Gyeong Su ^a   Park, Sung Hoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPE IMAGES; CHEMICAL BONDING STATE; ENERGY-LEVEL ALIGNMENTS; GAS CLUSTER ION BEAMS; INTERFACE PROPERTY; POLY(3 ,4ETHYLENEDIOXYTHIOPHENE) POLYMERIZED WITH POLY(4-STYRENESULFONATE); SPUTTERING PROCESS; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

ALIGNMENT; BAND STRUCTURE; CHEMICAL ANALYSIS; CONDUCTING POLYMERS; ELECTRONIC STRUCTURE; INTERFACE STATES; PHASE INTERFACES; PHOTOELECTRON SPECTROSCOPY; SPUTTERING; X RAY DIFFRACTION;

ARGON;

EID: 84880882583     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812582     Document Type: Article

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