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Thin Solid Films

Volumn 545, Issue , 2013, Pages 514-516

High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator

(5) Wang, Lijuan a Qin, Haitao b Zhang, Wei b Zhang, Long a Yan, Donghang c

a CHANGCHUN UNIVERSITY OF TECHNOLOGY (China)

b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY (China)

Author keywords

Organic thin film transistors; Reliability; Silicon nitride; Threshold voltage; Vanadyl phthalocyanine

Indexed keywords

FIELD-EFFECT MOBILITIES; HIGH RELIABILITY; HIGH TEMPERATURE; INTERFACE DEFECT STATE; ORGANIC LIGHT EMITTING DISPLAY; ORGANIC THIN FILM TRANSISTORS; THIN-FILM TRANSISTOR (TFTS); VANADYL PHTHALOCYANINE;

AIR MOBILITY; DISPLAY DEVICES; INTERFACE STATES; INTERFACES (MATERIALS); RELIABILITY; SILICON NITRIDE; THRESHOLD VOLTAGE; VACUUM;

THIN FILM TRANSISTORS;

EID: 84884986646 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.07.044 Document Type: Article

Times cited : (14)

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