Electronic properties of the interfaces between the wide bandgap organic semiconductor para-sexiphenyl and samarium

Advanced Funtional Materials

Volumn 11, Issue 1, 2001, Pages 51-58

  Koch, Norbert ^a,e   Zojer, Egbert ^a   Rajagopal, Aparna ^b   Ghjisen, Jacques ^c   Johnson, Robert L ^d   Leising, Günther ^a,e   Pireaux, Jean Jacques ^c  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b RUTGERS UNIVERSITY   (United States)

^c UNIVERSITY OF NAMUR   (Belgium)

^d UNIVERSITY OF HAMBURG   (Germany)

^e JOANNEUM RESEARCH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); MORPHOLOGY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SAMARIUM; THIN FILMS; ULTRAVIOLET SPECTROSCOPY;

INTERFACIAL DIPOLE; PARA-SEXIPHENYL; PHYSISORPTION; SCANNING PROBE MICROSCOPY; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0035255014     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/1616-3028(200102)11:1<51::AID-ADFM51>3.0.CO;2-Q     Document Type: Article

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