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Volumn 520, Issue 6, 2012, Pages 1982-1987

Interface diffusion characteristics of Al-2 at.%Nd/n + a-Si:H and Al-2 at.%Nd/n + poly-Si bilayers

(4) Choi, Nackbong a Yoon, Soo Young b Kim, Chang Dong b Hatalis, Miltiadis a

Author keywords

a Si:H, polycrystalline silicon; Annealing; Auger Electron Spectroscopy; Diffusion; Interdiffusion; Nd doped aluminum; X ray Photoelectron Spectroscopy

Indexed keywords

A-SI:H; ANNEALING TEMPERATURES; ATOMIC DIFFUSIONS; AUGER ELECTRON; BI-LAYER; DIFFUSION CHARACTERISTICS; FOUR-POINT PROBE METHOD; HYDROGENATED AMORPHOUS SILICON THIN FILMS; INTERFACE DIFFUSION; ND-DOPED; OPTICAL MICROSCOPES; PHOSPHORUS-DOPED; POLY-SI TFTS; RESISTANCE VARIATIONS; SOURCE-DRAIN ELECTRODES;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; ANNEALING; ATOMIC SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; AUGERS; DIFFUSION; DIFFUSION BARRIERS; NEODYMIUM; PHOSPHORUS; PHOTONS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 84855919683 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.08.070 Document Type: Article

Times cited : (5)

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