SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 13, 2010, Pages 2659-2663

Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors

(6) Lee, Kimoon a Lee, Byoung H b Lee, Kwang H a Park, Ji Hoon a Sung, Myung M b Im, Seongil a

a Yonsei University (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; DIRECT MEASUREMENT; DIRECT PROBE; ELECTRICAL STABILITY; ENERGY LEVEL; IN-FIELD; INTERFACE CHARGE; INTERFACIAL TRAPS; OXIDE SURFACE; PENTACENES; PHOTON BEAMS; PHOTON ENERGY; QUANTITATIVE ANALYSIS;

ELECTRON ENERGY LEVELS; ORGANIC FIELD EFFECT TRANSISTORS; PHOTONS; PROBES; SELF ASSEMBLED MONOLAYERS;

FIELD EFFECT TRANSISTORS;

EID: 77949494549 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b921636g Document Type: Article

Times cited : (11)

References (24)

1
- 0032869272
- Z. Bao J. A. Rogers H. E. Katz J. Mater. Chem. 1999 9 1895 1904
- (1999) J. Mater. Chem. , vol.9 , pp. 1895-1904
- Bao, Z.¹ Rogers, J.A.² Katz, H.E.³

2
- 2342486652
- S. R. Forrest Nature 2004 428 911 918
- (2004) Nature , vol.428 , pp. 911-918
- Forrest, S.R.¹

3
- 33746629488
- M. Muccini Nat. Mater. 2006 5 605 613
- (2006) Nat. Mater. , vol.5 , pp. 605-613
- Muccini, M.¹

4
- 0242605620
- Marcel Dekker, Inc, New York & Basel
- C. R. Kagan and P. Andry, in Thin-film Transistors, Marcel Dekker, Inc, New York & Basel, 2003
- (2003) Thin-film Transistors
- Kagan, C.R.¹ Andry In, P.²

5
- 66149121025
- S. A. DiBenedetto A. Facchetti M. A. Ratner T. J. Marks Adv. Mater. 2009 21 1407 1433
- (2009) Adv. Mater. , vol.21 , pp. 1407-1433
- Dibenedetto, S.A.¹ Facchetti, A.² Ratner, M.A.³ Marks, T.J.⁴

6
- 69149092804
- M. J. Jaquith J. E. Anthony J. A. Marohn J. Mater. Chem. 2009 19 6116 6123
- (2009) J. Mater. Chem. , vol.19 , pp. 6116-6123
- Jaquith, M.J.¹ Anthony, J.E.² Marohn, J.A.³

7
- 20944450551
- Y. Noh D. Kim Y. Yoshida K. Yase B. Jung E. Lim H. Shim R. Azumi J. Appl. Phys. 2005 97 104504
- (2005) J. Appl. Phys. , vol.97 , pp. 104504
- Noh, Y.¹ Kim, D.² Yoshida, Y.³ Yase, K.⁴ Jung, B.⁵ Lim, E.⁶ Shim, H.⁷ Azumi, R.⁸

8
- 79956009334
- Y. S. Yang S. H. Kim J. Lee H. Y. Chu L. Do H. Lee J. Oh T. Zyung Appl. Phys. Lett. 2002 80 1595 1597
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1595-1597
- Yang, Y.S.¹ Kim, S.H.² Lee, J.³ Chu, H.Y.⁴ Do, L.⁵ Lee, H.⁶ Oh, J.⁷ Zyung, T.⁸

9
- 33645502724
- C. Goldmann C. Kreller K. P. Pernstich S. Hass D. J. Gundlach B. Batlogg J. Appl. Phys. 2006 99 034507
- (2006) J. Appl. Phys. , vol.99 , pp. 034507
- Goldmann, C.¹ Kreller, C.² Pernstich, K.P.³ Hass, S.⁴ Gundlach, D.J.⁵ Batlogg, B.⁶

10
- 19544380397
- D. V. Lang X. Chi T. Siegrist A. M. Sergent A. P. Ramirez Phys. Rev. Lett. 2004 93 086802
- (2004) Phys. Rev. Lett. , vol.93 , pp. 086802
- Lang, D.V.¹ Chi, X.² Siegrist, T.³ Sergent, A.M.⁴ Ramirez, A.P.⁵

11
- 12244262806
- Y. S. Kim S. J. Yun J. Cryst. Growth 2005 274 585 593
- (2005) J. Cryst. Growth , vol.274 , pp. 585-593
- Kim, Y.S.¹ Yun, S.J.²

12
- 53749099717
- B. H. Lee K. H. Lee S. Im M. M. Sung Org. Electron. 2008 9 1146 1153
- (2008) Org. Electron. , vol.9 , pp. 1146-1153
- Lee, B.H.¹ Lee, K.H.² Im, S.³ Sung, M.M.⁴

13
- 0345979435
- A. Ulman Chem. Rev. 1996 96 1533 1554
- (1996) Chem. Rev. , vol.96 , pp. 1533-1554
- Ulman, A.¹

14
- 33644902070
- J. H. Cho Y. D. Park D. H. Kim W. K. Kin H. W. Jang J. Lee K. Cho Appl. Phys. Lett. 2006 88 102104
- (2006) Appl. Phys. Lett. , vol.88 , pp. 102104
- Cho, J.H.¹ Park, Y.D.² Kim, D.H.³ Kin, W.K.⁴ Jang, H.W.⁵ Lee, J.⁶ Cho, K.⁷

15
- 43849103446
- P. Marmont N. Battaglini P. Lang G. Horowitz J. Hwang A. Kahn C. Amato P. Calas Org. Electron. 2008 9 419 424
- (2008) Org. Electron. , vol.9 , pp. 419-424
- Marmont, P.¹ Battaglini, N.² Lang, P.³ Horowitz, G.⁴ Hwang, J.⁵ Kahn, A.⁶ Amato, C.⁷ Calas, P.⁸

16
- 23944443280
- H. Yang T. J. Shin M. Ling K. Cho C. Y. Ryu Z. Bao J. Am. Chem. Soc. 2005 127 11542 11543
- (2005) J. Am. Chem. Soc. , vol.127 , pp. 11542-11543
- Yang, H.¹ Shin, T.J.² Ling, M.³ Cho, K.⁴ Ryu, C.Y.⁵ Bao, Z.⁶

17
- 17944377910
- I. Yagi K. Tsukagoshi Y. Aoyagi Appl. Phys. Lett. 2005 86 103502
- (2005) Appl. Phys. Lett. , vol.86 , pp. 103502
- Yagi, I.¹ Tsukagoshi, K.² Aoyagi, Y.³

18
- 32944456752
- S. M. Cho S. H. Han J. H. Kim J. Jang M. H. Oh Appl. Phys. Lett. 2006 88 071106
- (2006) Appl. Phys. Lett. , vol.88 , pp. 071106
- Cho, S.M.¹ Han, S.H.² Kim, J.H.³ Jang, J.⁴ Oh, M.H.⁵

19
- 33244475792
- W. Eccleston IEEE Trans. Electron Devices 2006 53 474 480
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 474-480
- Eccleston, W.¹

20
- 1842529015
- J. Lee S. S. Kim K. Kim J. H. Kim S. Im Appl. Phys. Lett. 2004 84 1701 1703
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1701-1703
- Lee, J.¹ Kim, S.S.² Kim, K.³ Kim, J.H.⁴ Im, S.⁵

21
- 66049086164
- T. Cramer T. Steinbrecher T. Koslowski D. A. Kase F. Biscarini F. Zerbetto Phys. Rev. B: Condens. Matter Mater. Phys. 2009 79 155316
- (2009) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.79 , pp. 155316
- Cramer, T.¹ Steinbrecher, T.² Koslowski, T.³ Kase, D.A.⁴ Biscarini, F.⁵ Zerbetto, F.⁶

22
- 38049071417
- D. K. Hwang M. S. Oh J. M. Hwang J. H. Kim S. Im Appl. Phys. Lett. 2008 92 013304
- (2008) Appl. Phys. Lett. , vol.92 , pp. 013304
- Hwang, D.K.¹ Oh, M.S.² Hwang, J.M.³ Kim, J.H.⁴ Im, S.⁵

23
- 48249111879
- T. Miyadera S. D. Wang T. Mirani K. Tsukagoshi Y. Aoyagi Appl. Phys. Lett. 2008 93 033304
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033304
- Miyadera, T.¹ Wang, S.D.² Mirani, T.³ Tsukagoshi, K.⁴ Aoyagi, Y.⁵

24
- 35348952731
- A. Benor A. Hoppe V. Wagner D. Knipp Org. Electron. 2007 8 749 758
- (2007) Org. Electron. , vol.8 , pp. 749-758
- Benor, A.¹ Hoppe, A.² Wagner, V.³ Knipp, D.⁴

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