Characteristics of low temperature SiN x films deposited by using highly diluted silane in nitrogen

Journal of Korean Institute of Metals and Materials

Volumn 50, Issue 8, 2012, Pages 613-618

  No, Kil Sun ^a   Keum, Ki Su ^a   Hong, Wan Shick ^a  

^a University of Seoul   (South Korea)

Author keywords

Conductivity resistivity; Dielectrics; Electrical properties; Highly diluted gas; Lowtemperature; PECVD; Silicon nitride; TFT; Vapor deposition

Indexed keywords

BREAKDOWN FIELD; CAPACITANCE VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL AND MECHANICAL PROPERTIES; FIELD-EFFECT MOBILITIES; FLAT-BAND VOLTAGE SHIFT; LOW TEMPERATURES; METAL INSULATORS; ON/OFF RATIO; SUBTHRESHOLD SLOPE; TFT; THIN-FILM TRANSISTOR (TFTS);

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; MIM DEVICES; MIS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; VAPOR DEPOSITION; VAPORS;

SILICON NITRIDE;

EID: 84865001835     PISSN: 17388228     EISSN: None     Source Type: Journal    
DOI: 10.3365/KJMM.2012.50.8.613     Document Type: Article

References (16)

1. C. H. Lee, D. Striakhilev, and A. Nathan, IEEE Trans. Electron Devices 54, 1 (2007).
2. C. S. Yang, L. L. Smith, C. B. Artur, and G Parsons, J. Vac. Sci. Tech. B18,683 (2000).
3. J. G Kim, Z. T. Park, Y. S. Choi, J. H. Boo, and Y. J. Yu, J. Kor. Inst. Met. & Mater. 41, 6 (2003).
4. K. S. Keum, J. D. Hwang, J. Y. Kim, and W. S. Hong, Korean J. Met. Mater. 50,331 (2012).
5. H. Uchida, K. Takechi, S. Nishida, and S. Kaneko, Japan. J. Appl. Phys. 30,3691 (1991).
6. I. Kobayashi, T. Ogawa, and S. Hotta, Japan. J. Appl. Phys. 31,336(1992).
7. A. Sazonov, D. Stryahilev, A. Nathan, and D. Bogomolova, J. Non-Cryst. Solids 1360,299 (2002).
8. K. J. Park and N. Gregory. J. Parsons, Vac. Sci. Technol. All, 6 (2004).
9. D. L. Smith, A. S. Alimonda, J. Von, and P. Frederick, J. Vac. Sci. Technol. B8,551 (1990).
10. D. L. Smith, A. S. Alimonda, C. C. Chen, S. E. Ready, and B. Wacker, J. Electrochem. Soc. 137, 614 (1990).
11. A. Sazonov, A. Nathan, and D. Striakhilev, J. Non-Cryst. Solids 1329,266 (2000).
12. S. Sitbon, M. C. Hugon, B. Agius, F. Abel, J. L. Courant, and M. Puech, J. Vac. Sci. Technol. A13,2900 (1995).
13. K. Allaert, A. Van Calster, H. Loos, and A. Lequesne, J. Electrochem. Soc. 132,1763 (1985).
14. F. Delmotte, M. C. Hugon, B. Agiusa, and J. L. Courant, J. Vac. Sci. Technol. 15,1919 (1997).
15. M. J. Loboda and J. A. Seifferly, J. Mater. Res. 11, 391 (1996).
16. S. M. Sze, Physics of Semiconductor Devices 2nd Wiley New York (1981).