Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 31, Issue 5, 2013, Pages

  Lima, Lucas P B ^a   Diniz, José A ^a   Radtke, Claudio ^b   Dos Santos, Marcos V P ^a   Doi, Ioshiaki ^a   Godoy Fo, José ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DIPOLE VARIATIONS; FIN FIELD EFFECT TRANSISTORS; METAL ELECTRODES; METAL GATE ELECTRODES; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS;

ALUMINUM COATINGS; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRODES; ELECTROLYTIC CAPACITORS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MOS CAPACITORS; PHOTOELECTRONS; SCHOTTKY BARRIER DIODES; TITANIUM DIOXIDE; TITANIUM NITRIDE; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

TIN OXIDES;

EID: 84884923840     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4817178     Document Type: Article

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