SCOPUS 정보 검색 플랫폼

Volumn 92, Issue , 2012, Pages 86-90

Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

(4) Lima, L P B a Diniz, J A a Doi, I a Godoy Fo, J a

a UNIVERSITY OF CAMPINAS (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; CAPACITANCE VOLTAGE; CONVENTIONAL FURNACE; CURRENT-VOLTAGE MEASUREMENTS; DC SPUTTERING; DEFECT INCORPORATION; ELECTRICAL RESISTIVITY; EXTRACTION METHOD; FORMING GAS; FOUR-PROBE; FUNCTION EXTRACTION; FUNCTION VALUES; GATE ELECTRODES; I - V CURVE; IDEALITY FACTORS; METAL OXIDE SEMICONDUCTOR; MOS TECHNOLOGY; PHASE FORMATIONS; POLYCRYSTALLINE; SCHOTTKY DEVICES; SCHOTTKY DIODES; SEMI-CONDUCTOR SURFACES; SI SUBSTRATES; SINTERING PROCESS; TIN ELECTRODES; TIN LAYERS;

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTROLYTIC CAPACITORS; FABRICATION; GATE DIELECTRICS; MOS CAPACITORS; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SILICON; SILICON COMPOUNDS; SINTERING; SUBSTRATES; SURFACE DEFECTS; TINNING; TITANIUM NITRIDE; WORK FUNCTION; X RAY DIFFRACTION;

SEMICONDUCTING SILICON;

EID: 84858288213 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.04.059 Document Type: Conference Paper

Times cited : (74)

References (19)

1
- 67650684326
- C. Henkel, S. Abermann, O. Bethge, P. Klang, E. Bertagnolli, in: Proceedings 10th International Conference Ultimate Integration of Silicon, ULIS 2009 (2009) 197-200.
- (2009) Proceedings 10th International Conference Ultimate Integration of Silicon, ULIS 2009 , pp. 197-200
- Henkel, C.¹ Abermann, S.² Bethge, O.³ Klang, P.⁴ Bertagnolli, E.⁵

2
- 36148986053
- S. Chatterjee, Y. Kuo, and J. Lu Microelect. Eng. 85 2008 202 209
- (2008) Microelect. Eng. , vol.85 , pp. 202-209
- Chatterjee, S.¹ Kuo, Y.² Lu, J.³

3
- 34948898010
- J. Chen, X.P. Wang, M.F. Li, S.J. Lee, M.B. Yu, C. Shen, and Y.C. Yeo IEEE Elec. Device Lett. 28 10 2007 862 864
- (2007) IEEE Elec. Device Lett. , vol.28 , Issue.10 , pp. 862-864
- Chen, J.¹ Wang, X.P.² Li, M.F.³ Lee, S.J.⁴ Yu, M.B.⁵ Shen, C.⁶ Yeo, Y.C.⁷

4
- 49749088733
- J. Nazon, J. Sarrandin, V. Flaud, J.C. Tedenac, and N. Fréty J. Alloys. Comp. 464 2008 526 531
- (2008) J. Alloys. Comp. , vol.464 , pp. 526-531
- Nazon, J.¹ Sarrandin, J.² Flaud, V.³ Tedenac, J.C.⁴ Fréty, N.⁵

5
- 0036508201
- Y. Taur J. Res. Dev. 46 2002 213 222
- (2002) J. Res. Dev. , vol.46 , pp. 213-222
- Taur, Y.¹

6
- 0035253896
- W.H. Lee, J.C. Lin, and C. Lee Mater. Chem. Phys. 68 2001 266 271
- (2001) Mater. Chem. Phys. , vol.68 , pp. 266-271
- Lee, W.H.¹ Lin, J.C.² Lee, C.³

7
- 84858292816
- X. Sun, E. Kolawa, J.S. Chen, J.S. Reid, and M.A. Nicolet Thin Solid Films 236 1993 47
- (1993) Thin Solid Films , vol.236 , pp. 47
- Sun, X.¹ Kolawa, E.² Chen, J.S.³ Reid, J.S.⁴ Nicolet, M.A.⁵

8
- 33947131864
- R. Sreenivasana, T. Sugawara, K.C. Saraswat, and P.C. McIntyre Appl. Phys. Lett. 90 2007 102101
- (2007) Appl. Phys. Lett. , vol.90 , pp. 102101
- Sreenivasana, R.¹ Sugawara, T.² Saraswat, K.C.³ McIntyre, P.C.⁴

9
- 0032680955
- W.K. Hensen, K.Z. Ahmed, E.M. Vogel, J.R. Hauser, J.J. Wortman, R.D. Venables, M. Xu, and D. Venables IEEE Electron Dev. Lett. 20 4 1999 179
- (1999) IEEE Electron Dev. Lett. , vol.20 , Issue.4 , pp. 179
- Hensen, W.K.¹ Ahmed, K.Z.² Vogel, E.M.³ Hauser, J.R.⁴ Wortman, J.J.⁵ Venables, R.D.⁶ Xu, M.⁷ Venables, D.⁸

10
- 0031098092
- Li-Jian Meng, and M.P. Dos Santos Surf. Coat. Technol. 90 1997 64 70
- (1997) Surf. Coat. Technol. , vol.90 , pp. 64-70
- Meng, L.-J.¹ Dos Santos, M.P.²

11
- 54249170117
- Y. Liu, T. Hayashida, T. Matsukawa, K. Endo, M. Masahara, S. O'Uchi, K. Sakamoto, J. IshiiI, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, and E. Suzuki Jpn. J. Appl. Phys. 47 4 2008 2433 2437
- (2008) Jpn. J. Appl. Phys. , vol.47 , Issue.4 , pp. 2433-2437
- Liu, Y.¹ Hayashida, T.² Matsukawa, T.³ Endo, K.⁴ Masahara, M.⁵ O'Uchi, S.⁶ Sakamoto, K.⁷ Ishiii, J.⁸ Tsukada, J.⁹ Ishikawa, Y.¹⁰ Yamauchi, H.¹¹ Ogura, A.¹² Suzuki, E.¹³

12
- 33846967539
- G. Sjöblom, J. Westlinder, and J. Olsson IEEE Trans. Electron Dev. 52 10 2005 2349 2352
- (2005) IEEE Trans. Electron Dev. , vol.52 , Issue.10 , pp. 2349-2352
- Sjöblom, G.¹ Westlinder, J.² Olsson, J.³

13
- 73849083890
- H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, and H. Hwang Jpn. J. Appl. Phys. 48 2009 116506
- (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 116506
- Park, H.¹ Chang, M.² Jo, M.³ Choi, R.⁴ Lee, B.H.⁵ Hwang, H.⁶

14
- 84858278477
- M.S.R.N. Kirna, M. Ghanashyam Krishna, and K.A. Padmanabhan Appl. Surf. Sci. 225 2008 1934 1941
- (2008) Appl. Surf. Sci. , vol.225 , pp. 1934-1941
- Kirna, M.S.R.N.¹ Ghanashyam Krishna, M.² Padmanabhan, K.A.³

15
- 61549096277
- T. Hussain, R. Ahmad, I.A. Khan, J. Siddiqui, N. Khalid, A.S. Bhatti, and S. Naseem Nucl. Inst. Meth. Phys. Res. B 267 2009 768 772
- (2009) Nucl. Inst. Meth. Phys. Res. B , vol.267 , pp. 768-772
- Hussain, T.¹ Ahmad, R.² Khan, I.A.³ Siddiqui, J.⁴ Khalid, N.⁵ Bhatti, A.S.⁶ Naseem, S.⁷

16
- 61549096277
- T. Hussain, R. Ahmad, I.A. Khan, J. Siddiqui, N. Khalid, A.S. Bhatti, and S. Naseem Nuc. Inst. Meth. Phys. Resea. B 267 2009 768 772
- (2009) Nuc. Inst. Meth. Phys. Resea. B , vol.267 , pp. 768-772
- Hussain, T.¹ Ahmad, R.² Khan, I.A.³ Siddiqui, J.⁴ Khalid, N.⁵ Bhatti, A.S.⁶ Naseem, S.⁷

17
- 0034505825
- M. Bernard, A. Deneuville, O. Thomas, P. Gergaud, P. Sandstrom, and J. Birch Thin Solid Films 380 2000 252 255
- (2000) Thin Solid Films , vol.380 , pp. 252-255
- Bernard, M.¹ Deneuville, A.² Thomas, O.³ Gergaud, P.⁴ Sandstrom, P.⁵ Birch, J.⁶

18
- 84858296402
- C.C. Chen, N.T. Liang, W.S. Tse, L.Y. Chen, and J.G. Duh Chin. J. Phys. 32 1994 2
- (1994) Chin. J. Phys. , vol.32 , pp. 2
- Chen, C.C.¹ Liang, N.T.² Tse, W.S.³ Chen, L.Y.⁴ Duh, J.G.⁵

19
- 84858287331
- H.C. Barshilia, and K.S. Rajam J. Mater. Res. 19 2004 11
- (2004) J. Mater. Res. , vol.19 , pp. 11
- Barshilia, H.C.¹ Rajam, K.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.