Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2433-2437

  Liu, Yongxun ^a   Hayashida, Tetsuro ^b   Matsukawa, Takashi ^a   Endo, Kazuhiko ^a   Masahara, Meishoku ^a   O'uchi, Shinich ^a   Sakamoto, Kunihiro ^a   Ishii, Kenichi ^a   Tsukada, Junichi ^a   Ishikawa, Yuki ^a   Yamauchi, Hiromi ^a   Ogura, Atsushi ^b   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

Flat band voltage; Gate first FinFET; Rapid thermal annealing; Threshold voltage control; TiN metal gate; Work function

Indexed keywords

AERODYNAMICS; ANNEALING; CLARIFICATION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; FLOW OF GASES; GAS DYNAMICS; METAL ANALYSIS; MOSFET DEVICES; NITRIDES; PLASMAS; PROBABILITY DENSITY FUNCTION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TIN; TITANIUM; TITANIUM COMPOUNDS; TRANSISTORS; VOLTAGE REGULATORS; WORK FUNCTION;

DEVICE PERFORMANCES; DOPED CHANNELS; ELECTRICAL CHARACTERISTICS; FLAT BAND VOLTAGE; GATE WORK FUNCTIONS; GATE-FIRST FINFET; METAL GATES; MOSFETS; NITROGEN GAS FLOWS; THERMAL ANNEALING; THRESHOLD VOLTAGE CONTROL; TIN METAL GATE;

TITANIUM NITRIDE;

EID: 54249170117     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2433     Document Type: Article

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