In-situ electrical characterization of ultrathin TiN films grown by reactive dc magnetron sputtering on SiO2

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6731-6736

  Ingason, A S ^a   Magnus, F ^a   Agustsson, J S ^b   Olafsson, S ^a   Gudmundsson, J T ^a  

^a UNIVERSITY OF ICELAND   (Iceland)

^b Mentis Cura ^*  (Iceland)

Author keywords

In situ resistivity; Magnetron sputtering; Thin film; Titanium nitride

Indexed keywords

CONTINUOUS FILMS; ELECTRICAL CHARACTERIZATION; ELECTRICAL RESISTANCES; GRAIN SIZE; HIGH DENSITY; IN-SITU; IN-SITU RESISTIVITY; MINIMUM THICKNESS; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURE; SI (100) SUBSTRATE; THERMALLY OXIDIZED; TIN FILMS; ULTRA-THIN; X-RAY DIFFRACTION MEASUREMENTS;

COALESCENCE; FILM GROWTH; GRAIN GROWTH; GROWTH TEMPERATURE; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; SILICON COMPOUNDS; STOICHIOMETRY; THIN FILM DEVICES; TITANIUM; TITANIUM NITRIDE; ULTRATHIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 72049122445     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.05.028     Document Type: Article

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