Nanochemistry, nanostructure, and electrical properties of Ta 2O 5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2230-2235

  Gu, Diefeng ^a,b   Li, Jing ^a,b   Dey, Sandwip K ^a,b   De Waard, Henk ^c   Marcus, Steven ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND LINKAGES; OXIDE BREAKDOWN CHARACTERISTICS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION (PEALD);

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; OXIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

TANTALUM COMPOUNDS;

EID: 33749355955     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2335432     Document Type: Article

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