Performance improvement of large area GaN MSM photodiode with thin AlGaN surface layer

Microelectronics International

Volumn 27, Issue 3, 2010, Pages 140-142

  Chuah, L S ^a   Hassan, Z ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Diodes; Electric current; Schottky barrier diodes; Semiconductor devices; Surface properties of materials

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN; BAND EDGE; BAND GAPS; BARRIER HEIGHTS; CAP LAYERS; DESIGN/METHODOLOGY/APPROACH; DEVICE CHARACTERISTICS; DEVICE STRUCTURES; FRONT FACE; GAN LAYERS; INCIDENT LIGHT; INTERFACE STATE; METAL-SEMICONDUCTOR-METAL PHOTODIODES; N-TYPE ALGAN; NEW STRUCTURES; ORDERS OF MAGNITUDE; PERFORMANCE IMPROVEMENTS; PHOTOGENERATED CARRIERS; PHOTOGENERATED ELECTRONS; PHOTON ENERGY; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SI (1 1 1); SURFACE LAYERS; SURFACE PROPERTIES OF MATERIALS; SURFACE STATE;

DARK CURRENTS; DIODES; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTODIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; SURFACE PROPERTIES;

SCHOTTKY BARRIER DIODES;

EID: 78549264778     PISSN: 13565362     EISSN: None     Source Type: Journal    
DOI: 10.1108/13565361011061939     Document Type: Article

References (13)

1. Averine, S., Chan, Y.C. and Lam, Y.L. (2000), Appl. Phys. Lett., Vol. 77 No. 2, p. 274.
2. Carrano, J.C., Li,T.,Grudowski,P.A.,Eiting, C.J.,Dupuis, R.D. and Campbell, J.C. (1997), Appl. Phys. Lett., Vol. 72 No. 5, p. 542.
3. Goldberg, Y.A. (1999), Semicond. Sci. Technol., Vol. 14, p. R41.
4. Hacke, P., Detchprohm, T., Hiramatsu, K. and Sawaki, N. (1993), Appl. Phys. Lett., Vol. 63, p. 2676.
5. Hanzaz, M., Bouhdada, A., Gibart, P. and Omnes, F. (2002), J. Appl. Phys., Vol. 92 No. 1, pp. 13-18.
6. Kim, K., Lambrecht,W.R.L., Segall, B. and Schilfgaarde,M.V. (1997), Phys. Rev. B, Vol. 56, p. 7363.
7. Liu, Q.Z., Yu, L.S., Deng, F., Lau, S.S. and Redwing, J.M. (1998), J. Appl. Phys., Vol. 84, p. 881.
8. Monroy, E., Calle, F., Muñ oz, E. and Omnès, F. (2000), "III-Nitride Based UV Photodetectors", in Yu, E.T. and Manasreh, M.O. (Eds), IIINitride Semiconductors: Applications and Devices, Gordon and Breach, Cooper Station, NY.
9. Perlin, P., Suski, T., Leszczynski, M. and Teisseyre, H. (1997) in Pearton, S.J. (Ed.), GaN and Related Materials, Gordon and Breach Science Publishers, Amsterdam.
10. Razeghi, M. and Rogalsky, A. (1996), J. Appl. Phys., Vol. 79, p. 7433.
11. Rideout, V.L. (1975), Solid-State Electron., Vol. 18, p. 541.
12. Strite, S. and Morkoc, H. (1992), J. Vac. Sci. Technol., Vol. B10, p. 1243.
13. T̈ r̈t, A., Tuzemen, S., Yildirim, M., Abay, B. and Saglam, M. (1992), Solid-State Electron, Vol. 35 No. 10, p. 1423.