GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 579-584

  Lee, Kai Hsuan ^a   Chang, Ping Chuan ^b   Chang, Shoou Jinn ^c   Wu, San Lein ^d  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

GaN; intermediate layers; ultraviolet photodetectors

Indexed keywords

DETECTIVITY; GAN; INTERMEDIATE LAYERS; NOISE EQUIVALENT POWER; NOISE LEVELS; REJECTION RATIOS; RESPONSIVITY; SCHOTTKY BARRIERS; ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS; UV DETECTION;

GALLIUM ALLOYS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; WAVEGUIDES;

GALLIUM NITRIDE;

EID: 84863230726     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127545     Document Type: Article

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