메뉴 건너뛰기




Volumn 8, Issue 6, 2008, Pages 724-729

III-nitride heterostructure layered tunnel barriers for a tunable hyperspectral detector

Author keywords

Dielectric films; Transducers; Tunneling; Ultraviolet detectors

Indexed keywords

ATMOSPHERICS; CHARGED PARTICLES; CUBIC BORON NITRIDE; DETECTORS; ELECTRONS; HETEROJUNCTIONS; NITRIDES; PIXELS; TUNNELS; WASTEWATER;

EID: 44649179269     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2008.923180     Document Type: Article
Times cited : (4)

References (20)
  • 2
    • 2442584872 scopus 로고    scopus 로고
    • Measuring trace gases in plumes from hyperspectral remotely sensed data
    • Apr
    • R. Marion, R. Michel, and C. Faye, "Measuring trace gases in plumes from hyperspectral remotely sensed data," IEEE Trans. Geosci. Rem. Sens., vol. 42, no. 4, pp. 854-864, Apr. 2004.
    • (2004) IEEE Trans. Geosci. Rem. Sens , vol.42 , Issue.4 , pp. 854-864
    • Marion, R.1    Michel, R.2    Faye, C.3
  • 4
    • 2542421935 scopus 로고    scopus 로고
    • Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition
    • Apr. 26
    • K.S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr,H. P. Liu, and I. G. Chen, "Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition," Appl. Phys. Lett., vol. 84, no. 17, pp. 3307-3309, Apr. 26, 2004.
    • (2004) Appl. Phys. Lett , vol.84 , Issue.17 , pp. 3307-3309
    • Ramaiah, K.S.1    Su, Y.K.2    Chang, S.J.3    Kerr, B.4    Liu, H.P.5    Chen, I.G.6
  • 6
    • 0037850715 scopus 로고    scopus 로고
    • Nitride-based green light emitting diodes grown by temperature ramping
    • C. H. Liu, Y. K. Su, T. C. Wen, S. J. Chang, and R. W. Chuang, "Nitride-based green light emitting diodes grown by temperature ramping," J. Crystal Growth, vol. 254, no. 3-4, pp. 336-341, 2003.
    • (2003) J. Crystal Growth , vol.254 , Issue.3-4 , pp. 336-341
    • Liu, C.H.1    Su, Y.K.2    Wen, T.C.3    Chang, S.J.4    Chuang, R.W.5
  • 7
    • 23844493393 scopus 로고    scopus 로고
    • Comparative study of GaN based light emitting devices grown on sapphire and GaN substrates
    • S. Figge, J. Dennemarck, G. Alexe, and D. Hommel, "Comparative study of GaN based light emitting devices grown on sapphire and GaN substrates," in Proc. Mater. Res. Soc. Symp., 2005, vol. 831, no. E11.36.
    • (2005) Proc. Mater. Res. Soc. Symp , vol.831 , Issue.E11.36
    • Figge, S.1    Dennemarck, J.2    Alexe, G.3    Hommel, D.4
  • 11
    • 0000090297 scopus 로고    scopus 로고
    • Layered tunnel barriers for nonvolatile memory devices
    • Oct. 12
    • K. K. Likharev, "Layered tunnel barriers for nonvolatile memory devices," Appl. Phys. Lett., vol. 73, no. 15, pp. 2137-2139, Oct. 12, 1998.
    • (1998) Appl. Phys. Lett , vol.73 , Issue.15 , pp. 2137-2139
    • Likharev, K.K.1
  • 12
    • 0036639637 scopus 로고    scopus 로고
    • Materials issues for layered tunnel barrier structures
    • Jul. 1
    • J. D. Casperson, L. D. Bell, and H. A. Atwater, "Materials issues for layered tunnel barrier structures," J. Appl. Phys., vol. 92, no. 1, pp. 261-267, Jul. 1, 2002.
    • (2002) J. Appl. Phys , vol.92 , Issue.1 , pp. 261-267
    • Casperson, J.D.1    Bell, L.D.2    Atwater, H.A.3
  • 13
    • 0000815007 scopus 로고
    • GaN, AIN, and InN: A review
    • July
    • S. Strite and H. Morkoccedil;, "GaN, AIN, and InN: A review," J. Vac. Sci. Technol. B, vol. 10, no. 4, pp. 1237-1266, July 1992.
    • (1992) J. Vac. Sci. Technol. B , vol.10 , Issue.4 , pp. 1237-1266
    • Strite, S.1    Morkoccedil, H.2
  • 15
    • 36449009352 scopus 로고    scopus 로고
    • Valence-band discontinuities of wurtzite GaN, AIN, and InN heterojunctions measured by x-ray photoemission spectroscopy
    • Apr. 29
    • G. Martin, A. Botchkarev, A. Rockett, and H. Morkoccedil;, "Valence-band discontinuities of wurtzite GaN, AIN, and InN heterojunctions measured by x-ray photoemission spectroscopy," Appl. Phys. Lett., vol. 68, no. 18, pp. 2541-2543, Apr. 29, 1996.
    • (1996) Appl. Phys. Lett , vol.68 , Issue.18 , pp. 2541-2543
    • Martin, G.1    Botchkarev, A.2    Rockett, A.3    Morkoccedil, H.4
  • 16
    • 11044228047 scopus 로고    scopus 로고
    • Misfit dislocation formation in the AlGaN/GaN heterointerface
    • Dec. 15
    • J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, "Misfit dislocation formation in the AlGaN/GaN heterointerface," J. Appl. Phys., vol. 96, no. 12, pp. 7087-7094, Dec. 15, 2004.
    • (2004) J. Appl. Phys , vol.96 , Issue.12 , pp. 7087-7094
    • Floro, J.A.1    Follstaedt, D.M.2    Provencio, P.3    Hearne, S.J.4    Lee, S.R.5
  • 17
    • 20444456690 scopus 로고    scopus 로고
    • In situ measurements of the critical thickness for strain relaxationin AlGaN/GaN heterostructures
    • Dec. 20
    • S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, K. E. Waldrip, A. T. Wise, and S. Mahajan, "In situ measurements of the critical thickness for strain relaxationin AlGaN/GaN heterostructures,"Appl. Phys. Lett., vol. 85, no. 25, pp. 6164-6166, Dec. 20, 2004.
    • (2004) Appl. Phys. Lett , vol.85 , Issue.25 , pp. 6164-6166
    • Lee, S.R.1    Koleske, D.D.2    Cross, K.C.3    Floro, J.A.4    Waldrip, K.E.5    Wise, A.T.6    Mahajan, S.7
  • 18
    • 10044250154 scopus 로고    scopus 로고
    • Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission
    • Nov. 1
    • J. C. Brewer, R. J. Walters, L. D. Bell, D. B. Farmer, R. G. Gordon, and H. A. Atwater, "Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission," Appl. Phys. Lett., vol. 85, no. 18, pp. 4133-4135, Nov. 1, 2004.
    • (2004) Appl. Phys. Lett , vol.85 , Issue.18 , pp. 4133-4135
    • Brewer, J.C.1    Walters, R.J.2    Bell, L.D.3    Farmer, D.B.4    Gordon, R.G.5    Atwater, H.A.6
  • 19
    • 18644377686 scopus 로고    scopus 로고
    • Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
    • Dec. 28
    • L. S. Yu, Q. J. Xing, D. Qiao, S. S. Lau, K. S. Boutros, and J. M. Redwing, "Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure," Appl. Phys. Lett., vol. 73, no. 26, pp. 3917-3919, Dec. 28, 1998.
    • (1998) Appl. Phys. Lett , vol.73 , Issue.26 , pp. 3917-3919
    • Yu, L.S.1    Xing, Q.J.2    Qiao, D.3    Lau, S.S.4    Boutros, K.S.5    Redwing, J.M.6
  • 20
    • 9144258943 scopus 로고
    • Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film
    • Jun
    • J. G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film," J. Appl. Phys., vol. 34, no. 6, pp. 1793-1903, Jun. 1963.
    • (1963) J. Appl. Phys , vol.34 , Issue.6 , pp. 1793-1903
    • Simmons, J.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.