Impedance model of electrolyte-insulator-semiconductor structure with porous silicon semiconductor

Electrochimica Acta

Volumn 54, Issue 14, 2009, Pages 3781-3787

  Betty, C A ^a   Lal, R ^b   Yakhmi, J V ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Capacitance; Conductance; Impedance model; Photoelectrode; Porous silicon; Porous silicon nitrided TiO2 structure; Porous silicon polyaniline structure

Indexed keywords

APPLIED BIAS; CONDUCTANCE; CONSTANT PHASE ELEMENTS; ELECTROLYTE INSULATOR SEMICONDUCTORS; IMPEDANCE MODEL; IMPEDANCE SPECTRUM; INTERFACIAL LAYERS; MEASUREMENT TOOLS; MESH STRUCTURES; PHOTOELECTRODE; PHYSICAL MODELS; POROUS STRUCTURES; SEMICONDUCTOR INTERFACES; SILICON MICROCHANNELS;

CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTROLYSIS; ELECTROLYTES; MODEL STRUCTURES; NONMETALS; PHASE INTERFACES; POLYANILINE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACE CHEMISTRY;

POROUS SILICON;

EID: 64049115487     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2009.01.071     Document Type: Article

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