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Japanese Journal of Applied Physics

Volumn 52, Issue 9, 2013, Pages

Theoretical investigation of graphene nanoribbon field-effect transistors designed for digital applications

(3) Harada, Naoki a Sato, Shintaro a Yokoyama, Naoki a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; DEVICE GEOMETRIES; DIGITAL APPLICATIONS; FIELD EFFECT TRANSISTOR (FETS); GRAPHENE NANO-RIBBON; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; PERFORMANCE LEVEL; THEORETICAL INVESTIGATIONS;

SCHOTTKY BARRIER DIODES;

FIELD EFFECT TRANSISTORS;

EID: 84883886164 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.094301 Document Type: Article

Times cited : (12)

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