The effective mass, band gap, device characteristics, and performance considerations for AGNR and AGNRFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2290-2295

  Xia, Tongsheng ^a   Wang, Yu ^a   Zhang, Liujun ^a   Li, Hongge ^a  

^a BEIHANG UNIVERSITY   (China)

Author keywords

Band gap; effective mass; on current off current ratio; tradeoff

Indexed keywords

ARMCHAIR GRAPHENE NANORIBBONS; COMPLEX BAND STRUCTURES; DEVICE CHARACTERISTICS; EDGE BOND RELAXATION; EFFECTIVE MASS; MATERIAL CHARACTERISTICS; OFF-STATE LEAKAGE CURRENT; ON -CURRENT-OFF-CURRENT RATIO; ON-CURRENTS; QUANTUM TRANSPORT; TIGHT BINDING; TRADEOFF; TWO-LINE;

FIELD EFFECT TRANSISTORS; GRAPHENE; QUANTUM ELECTRONICS;

ENERGY GAP;

EID: 84865461536     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2201944     Document Type: Article

References (23)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004. (Pubitemid 39440910)
2. Y. B. Zhang, Y. W. Tan, H. L. Stormer, and P. Kim, "Experimental observation of the quantum Hall effect and Berry's phase in graphene," Nature, vol. 438, no. 7065, pp. 201-204, Nov. 2005. (Pubitemid 41599868)
3. C. Berger, Z. M. Song, X. B. Li, X. B. Li, X. S. Wu, N. Brown, C. Naud, D.Mayo, T. B. Li, J. Hass, A. N.Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, "Electronic confinement and coherence in patterned epitaxial graphene," Science, vol. 312, no. 5777, pp. 1191-1196, May 2006. (Pubitemid 43801140)
4. B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, M. D. Gilies, M. A. Stettler, and D. E. Nikonov, "Analysis of graphene nanoribbons as a channel material for field-effect transistors," Appl. Phys. Lett., vol. 88, no. 14, pp. 142 102-142 104, Apr. 2006.
5. M. Y. Han, B. Ozyilmaz, Y. B. Zhang, and P. Kim, "Energy band-gap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, no. 20, pp. 206 805-206 808, May 2007.
6. J. H. Kang, Y. He, J. Y. Zhang, X. X. Yu, X. M. Guan, and Z. P. Yu, "Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors," Appl. Phys. Lett., vol. 96, no. 25, pp. 252 105-252 107, Jun. 2010.
7. G. C. Liang, N. Neophytos, D. Nikonov, and M. Lundstrom, "Performance projections for ballistic graphene nanoribbon field-effect transistors," IEEE Trans. Electron Devices, vol. 54, no. 4, pp. 677-682, Apr. 2007. (Pubitemid 46563359)
8. X. Guan, M. Zhang, Q. Liu, and Z. Yu, "Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method," in IEDM Tech. Dig., 2007, pp. 761-764.
9. P. Zhao and J. Guo, "Modeling edge effects in graphene nanoribbon fieldeffect transistors with real and mode space methods," J. Appl. Phys., vol. 105, no. 3, pp. 034503-1-034503-7, Feb. 2009.
10. R. Grassi, S. Poli, E. Gnani, A. Gnudi, S. Reggiani, and G. Baccarani, "Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs," Solid State Electron., vol. 53, no. 4, pp. 462-467, Apr. 2009.
11. T. S. Xia, L. F. Register, and S. K. Banerjee, "Calculations and applications of the complex band structure for carbon nanotube field-effect transistors," Phys. Rev. B, vol. 70, no. 4, pp. 045322-045329, Jul. 2004.
12. T. S. Xia, L. F. Register, and S. K. Banerjee, "Quantum transport in carbon nanotube transistors: Complex band structure effects," J. Appl. Phys., vol. 95, no. 3, pp. 1597-1599, Feb. 2004.
13. L. J. Zhang and T. S. Xia, "The complex band structure for armchair graphene nanoribbons," Chin. Phys. B, vol. 19, no. 11, pp. 117 105-117 111, Nov. 2010.
14. D. Gunlycke and C. T. White, "Tight-binding energy dispersions of armchair-edge graphene nanostrips," Phys. Rev. B, vol. 77, no. 11, pp. 115 116-115 121, Mar. 2008.
15. J. M. Marulanda and A. Srivastava, "Carrier density and effective mass calculations for carbon nanotubes," Phys. Stat. Sol. B, vol. 245, no. 11, pp. 2558-2562, Aug. 2008.
16. D. I. Odili, Y. Wu, P. A. Childs, and D. C. Herbert, "Modeling charge transport in graphene nanoribbons and carbon nanotubes using a Schrödinger-Poisson solver," J. Appl. Phys., vol. 106, no. 2, pp. 024509-1-024509-5, Jul. 2009.
17. L. I. Berger, "Properties of semiconductors," in Handbook of Chemistry and Physics, 91st ed. Boulder, CO: CRC Press, 2010/2011.
18. G. Klimeck, R. C. Bowen, T. B. Boykin, and T. A. Cwik, " sp3s* tightbinding parameters for transport simulations in compound semiconductors," Superlattices Microstruct., vol. 27, no. 5/6, pp. 519-524, May 2000.
19. L. Jiao, L. Zhang, L. Ding, J. Liu, and H. Dai, "Aligned graphene nanoribbons and crossbars from unzipped carbon nanotubes," Nano Res., vol. 3, no. 6, pp. 387-394, 2010.
20. L. Xie, L. Jiao, and H. Dai, "Selective etching of graphene edges by hydrogen plasma," J. Amer. Chem. Soc., vol. 132, no. 42, pp. 14 751-14 753, Oct. 2010.
21. X. L. Lin, X. R.Wang, L. Zhang, S. Lee, and H. Dai, "Chemically derived, ultrasmooth graphene nanoribbon semiconductors," Science, vol. 319, no. 5867, pp. 1229-1232, Feb. 2008. (Pubitemid 351323015)
22. L. Tapasztó, G. Dobrik, P. Lambin, and L. P. Biró, "Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography," Nature Nanotechnol., vol. 3, pp. 397-401, Jun. 2008.
23. A. A. Shylau, J.W. Kłos, and I. V. Zozoulenko, "Capacitance of graphene nanoribbons," Phys. Rev. B, vol. 80, no. 20, pp. 205 402-205 410, Nov. 2009.