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Volumn 32, Issue 1, 2011, Pages 6-8

Computational study of edge configuration and quantum confinement effects on graphene nanoribbon transport

Author keywords

Ballistic transport; bandgap; edge bond relaxation; effective mass; graphene nanoribbon (GNR); quantum confinement

Indexed keywords

BALLISTIC TRANSPORTS; BAND GAPS; EDGE BOND RELAXATION; EFFECTIVE MASS; GRAPHENE NANORIBBON (GNR);

EID: 78650907446     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2086426     Document Type: Conference Paper
Times cited : (63)

References (17)
  • 3
    • 0030492538 scopus 로고    scopus 로고
    • Peculiar localized state at zigzag graphite edge
    • Jul.
    • M. Fujita, K. Wakabayashi, K. Nakada, and K. Kusakabe, "Peculiar localized state at zigzag graphite edge," J. Phys. Soc. Jpn., vol. 65, no. 7, pp. 1920-1923, Jul. 1996.
    • (1996) J. Phys. Soc. Jpn. , vol.65 , Issue.7 , pp. 1920-1923
    • Fujita, M.1    Wakabayashi, K.2    Nakada, K.3    Kusakabe, K.4
  • 4
    • 34147162745 scopus 로고    scopus 로고
    • Performance projections for ballistic graphene nanoribbon field-effect transistors
    • DOI 10.1109/TED.2007.891872
    • G. Liang, N. Neophytou, D. E. Nikonov, and M. S. Lundstrom, "Performance projections for ballistic graphene nanoribbon field-effect transistors," IEEE Trans. Electron Devices, vol. 54, no. 4, pp. 677-682, Apr. 2007. (Pubitemid 46563359)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.4 , pp. 677-682
    • Liang, G.1    Neophytou, N.2    Nikonov, D.E.3    Lundstrom, M.S.4
  • 5
    • 34547334459 scopus 로고    scopus 로고
    • Energy band-gap engineering of graphene nanoribbons
    • May
    • M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, "Energy band-gap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, no. 20, p. 206805, May 2007.
    • (2007) Phys. Rev. Lett. , vol.98 , Issue.20 , pp. 206805
    • Han, M.Y.1    Özyilmaz, B.2    Zhang, Y.3    Kim, P.4
  • 6
    • 40049093097 scopus 로고    scopus 로고
    • Chemically derived, ultrasmooth graphene nanoribbon semiconductors
    • Feb.
    • X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, "Chemically derived, ultrasmooth graphene nanoribbon semiconductors," Science, vol. 319, no. 5867, pp. 1229-1232, Feb. 2008.
    • (2008) Science , vol.319 , Issue.5867 , pp. 1229-1232
    • Li, X.1    Wang, X.2    Zhang, L.3    Lee, S.4    Dai, H.5
  • 7
    • 33751348065 scopus 로고    scopus 로고
    • Energy gaps in graphene nanoribbons
    • Nov.
    • Y. W. Son, M. L. Cohen, and S. G. Louie, "Energy gaps in graphene nanoribbons," Phys. Rev. Lett., vol. 97, no. 21, p. 216803, Nov. 2006.
    • (2006) Phys. Rev. Lett. , vol.97 , Issue.21 , pp. 216803
    • Son, Y.W.1    Cohen, M.L.2    Louie, S.G.3
  • 8
    • 34247522914 scopus 로고    scopus 로고
    • Ab initio theory of gate induced gaps in graphene bilayers
    • Apr.
    • H. Min, B. Sahu, S. K. Banerjee, and A. H. MacDonald, "Ab initio theory of gate induced gaps in graphene bilayers," Phys. Rev. B, Condens. Matter, vol. 75, no. 15, p. 155115, Apr. 2007.
    • (2007) Phys. Rev. B, Condens. Matter , vol.75 , Issue.15 , pp. 155115
    • Min, H.1    Sahu, B.2    Banerjee, S.K.3    MacDonald, A.H.4
  • 9
    • 78650883074 scopus 로고    scopus 로고
    • Performance potentials of bilayer graphene and graphene nanoribbon FETs
    • presented at the Tokyo, Japan, Sep.
    • H. Hosokawa, H. Ando, and H. Tsuchiya, "Performance potentials of bilayer graphene and graphene nanoribbon FETs," presented at the Int. Conf. Solid State Devices Materials (SSDM), Tokyo, Japan, Sep. 2010.
    • (2010) Int. Conf. Solid State Devices Materials (SSDM)
    • Hosokawa, H.1    Ando, H.2    Tsuchiya, H.3
  • 10
    • 41449108135 scopus 로고    scopus 로고
    • Tight-binding energy dispersions of armchair-edge graphene nanostrips
    • Mar.
    • D. Gunlycke and C. T. White, "Tight-binding energy dispersions of armchair-edge graphene nanostrips," Phys. Rev. B, Condens. Matter, vol. 77, no. 11, p. 115116, Mar. 2008.
    • (2008) Phys. Rev. B, Condens. Matter , vol.77 , Issue.11 , pp. 115116
    • Gunlycke, D.1    White, C.T.2
  • 11
    • 65249105994 scopus 로고    scopus 로고
    • Computational study of tunneling transistor based on graphene nanoribbon
    • Feb.
    • P. Zhao, J. Chauhan, and J. Guo, "Computational study of tunneling transistor based on graphene nanoribbon," Nano Lett., vol. 9, no. 2, pp. 684-688, Feb. 2009.
    • (2009) Nano Lett. , vol.9 , Issue.2 , pp. 684-688
    • Zhao, P.1    Chauhan, J.2    Guo, J.3
  • 13
    • 64549117294 scopus 로고    scopus 로고
    • Edge chemistry engineering of graphene nanoribbon transistors: A computational study
    • Y. Ouyang, Y. Yoon, and J. Guo, "Edge chemistry engineering of graphene nanoribbon transistors: A computational study," in IEDM Tech. Dig., 2008, pp. 517-520.
    • (2008) IEDM Tech. Dig. , pp. 517-520
    • Ouyang, Y.1    Yoon, Y.2    Guo, J.3
  • 14
    • 33751094287 scopus 로고    scopus 로고
    • Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors
    • Nov.
    • Y. Ouyang, Y. Yoon, J. K. Fodor, and J. Guo, "Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors," Appl. Phys. Lett., vol. 89, no. 20, p. 203107, Nov. 2006.
    • (2006) Appl. Phys. Lett. , vol.89 , Issue.20 , pp. 203107
    • Ouyang, Y.1    Yoon, Y.2    Fodor, J.K.3    Guo, J.4
  • 15
    • 76249092549 scopus 로고    scopus 로고
    • Comparisons of performance potentials of silicon nanowire and graphene nanoribbon MOSFETs considering first-principles bandstructure effects
    • Feb.
    • H. Tsuchiya, H. Ando, S. Sawamoto, T. Maegawa, T. Hara, H. Yao, and M. Ogawa, "Comparisons of performance potentials of silicon nanowire and graphene nanoribbon MOSFETs considering first-principles bandstructure effects," IEEE Trans. Electron Devices, vol. 57, no. 2, pp. 406-414, Feb. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.2 , pp. 406-414
    • Tsuchiya, H.1    Ando, H.2    Sawamoto, S.3    Maegawa, T.4    Hara, T.5    Yao, H.6    Ogawa, M.7
  • 16
    • 70350217522 scopus 로고    scopus 로고
    • On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs
    • Beijing, China
    • A. Paul, S. Mehrotra, G. Klimeck, and M. Luisier, "On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs," in Proc. IWCE, Beijing, China, 2009, pp. 173-176.
    • (2009) Proc. IWCE , pp. 173-176
    • Paul, A.1    Mehrotra, S.2    Klimeck, G.3    Luisier, M.4
  • 17
    • 21644440311 scopus 로고    scopus 로고
    • Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors
    • J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors," in IEDM Tech. Dig., 2004, pp. 703-706.
    • (2004) IEDM Tech. Dig. , pp. 703-706
    • Guo, J.1    Javey, A.2    Dai, H.3    Lundstrom, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.