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Volumn 103, Issue 8, 2013, Pages

Correlation between the hysteresis and the initial defect density of graphene

(8) Cho, Chunhum a Lee, Young Gon a Jung, Ukjin a Kang, Chang Goo a Lim, Sungkwan a Hwang, Hyeon Jun a Choi, Hojun a Lee, Byoung Hun a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE EXCHANGES; ENVIRONMENTAL INFLUENCES; FAST CHARGING; GRAPHENE FIELD-EFFECT TRANSISTORS; HYSTERETIC DEVICES; INITIAL DEFECTS; PHYSICAL MECHANISM; WEAK CORRELATION;

CHARGE TRANSFER; DEFECT DENSITY; FIELD EFFECT TRANSISTORS; HYSTERESIS; REDOX REACTIONS;

GRAPHENE;

EID: 84883372789 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4818770 Document Type: Article

Times cited : (12)

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