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Volumn 100, Issue 5, 2012, Pages

Mapping the electronic properties of individual graphene grain boundaries

(6) Tapasztó, Levente a,b Nemes Incze, Péter a,b Dobrik, Gergely a,b Jae Yoo, Kwon b,c Hwang, Chanyong b,c Biró, László P a,b

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

b Korea Hungary Joint Laboratory for Nanosciences (Hungary)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE LATTICES; GRAPHENE SHEETS; INVERSION CHANNELS; NANO-METER SCALE; P-N JUNCTION; SHARP INTERFACE; SPATIALLY RESOLVED; STRUCTURAL DISORDERS; TOPOLOGICAL DEFECT; TUNNELING SPECTROSCOPY; UNDERLYING MECHANISM; VARIOUS CONFIGURATION;

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; GRAPHENE; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY;

ELECTRONIC PROPERTIES;

EID: 84857022965 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3681375 Document Type: Article

Times cited : (125)

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