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Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

Passivating chemical vapor deposited graphene with metal oxides for transfer and transistor fabrication processes

(4) Yamaguchi, Junichi a Hayashi, Kenjiro a Sato, Shintaro a Yokoyama, Naoki a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; D ORBITALS; ELECTRICAL TRANSPORT CHARACTERISTICS; FABRICATION PROCESS; METAL OXIDES; P-TYPE DOPING; SURFACE CONTAMINATIONS; TIO;

CHEMICAL VAPOR DEPOSITION; TRANSPORT PROPERTIES; VAPORS;

GRAPHENE;

EID: 84876358586 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4801927 Document Type: Article

Times cited : (15)

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