Fluorescent SiC and its application to white light-emitting diodes

Journal of Semiconductors

Volumn 32, Issue 1, 2011, Pages

  Kamiyama, Satoshi ^a   Iwaya, Motoaki ^a   Takeuchi, Tetsuya ^a   Akasaki, Isamu ^a   Syväjärvi, Mikael ^b   Yakimova, Rositza ^b  

^a MEIJO UNIVERSITY   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Donor acceptor pair; GaN; General lighting; Phosphor; SiC; White LED

Indexed keywords

DONOR-ACCEPTORS; GAN; GENERAL LIGHTING; SIC; WHITE LED;

CONVERSION EFFICIENCY; EPITAXIAL GROWTH; FLUORESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHTING; OPTICAL PROPERTIES; PHOSPHORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

LIGHT EMITTING DIODES;

EID: 79951667248     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/1/013004     Document Type: Article

References (5)

1. Nakamura S, Faso G. The blue laser diode. 1st ed. Heidelberg: Springer-Verlag, 1997
2. Uchida Y, Taguchi T. Lighting theory and luminous characteristics of white light-emitting diodes. J Opt Eng, 2003, 44: 124003
3. Kamiyama S, Maeda T, Nakamura Y, et al. Extremely high quantum efficiency of donor-acceptor pair emission in N and B doped 6H-SiC. J Appl Phys, 2006, 99: 093108
4. Nishino S, Matsumoto K, Yoshida T, et al. Epitaxial growth of 4H-SiC by sublimation close space technique. Mater Sci Eng, 1999, B61/62: 121
5. Syväjärvi M, Ciechonski R R, Yazdi G R, et al. Fast epitaxy by PVT of SiC in hydrogen atmosphere. J Cryst Growth, 2005, 275: 1109