Growth studies on quaternary AlInGaN layers for HEMT application

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 905-909

  Reuters, Benjamin ^a,c   Wille, A ^a,c   Hollander B ^b,c   Sakalauskas, E ^d   Ketteniss, N ^a,c   Mauder, C ^a,c   Goldhahn, R ^d,e   Heuken, M ^a,f   Kalisch, H ^a,c   Vescan, A ^a,c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c JARA FIT   (Germany)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^e Institut für Experimentelle Physik IEP   (Germany)

^f AIXTRON AG   (Germany)

Author keywords

AlInGaN; Composition; HEMT; InAlGaN; Polarization

Indexed keywords

ALINGAN; BARRIER LAYERS; COMPRESSIVE STRAIN; GAN BUFFER LAYERS; HETEROSTRUCTURE LAYERS; HIGH CARRIER MOBILITY; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH MOBILITY; HIGH-RESOLUTION X-RAY DIFFRACTION; INALGAN; LATTICE-MATCHED; QUATERNARY BARRIERS; ROOM TEMPERATURE; STRAIN STATE; STRUCTURAL AND ELECTRICAL PROPERTIES; VAN DER PAUW; WAVELENGTH DISPERSIVE X-RAY SPECTROSCOPIES;

CHEMICAL ANALYSIS; ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM NITRIDE; POLARIZATION; SAPPHIRE; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862118529     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-1989-6     Document Type: Article

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