Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

Optical Materials Express

Volumn 1, Issue 8, 2011, Pages 1439-1446

  Ou, Yiyu ^a   Jokubavicius, Valdas ^b   Kamiyama, Satoshi ^c   Liu, Chuan ^a   Berg, Rolf W ^a   Linnarsson, Margareta ^d   Yakimova, Rositza ^b   Syväjärvi, Mikael ^b   Ou, Haiyan ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b LINKÖPING UNIVERSITY   (Sweden)

^c MEIJO UNIVERSITY   (Japan)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORESCENCE; LUMINESCENCE; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON CARBIDE; SILICON;

ANGLE-RESOLVED; BAND DIAGRAMS; DONOR-ACCEPTOR PAIR EMISSION; EMISSION ANGLE; FERMI-DIRAC STATISTICS; STRONG LUMINESCENCE; WAVELENGTH CONVERTER; WHITE LED;

DOPING (ADDITIVES); SILICON COMPOUNDS;

EID: 84859417434     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.1.001439     Document Type: Article

References (38)

1. H. Yamamoto, "White LED phosphors: the next step," Proc. SPIE 7598, 759808 (2010).
2. P. Schlotter, R. Bompiedi, and J. Schneider, "Luminescence conversion of blue light emitting diodes," Appl. Phys. A 64, 417-418 (1997).
3. X. Guo, J. W. Graff, and E. F. Schubert, "Photon recycling semiconductor light-emitting diode," in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600-603.
4. E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2006).
5. C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, "White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots," IEEE Photon. Technol. Lett. 22, 884-886 (2010).
6. C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, "High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors," Org. Electron. 11, 266-272 (2010).
7. R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, "Highly efficient all-nitride phosphor-converted white light emitting diode," Phys. Status Solidi A 202, 1727-1732 (2005).
8. H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, "Patterned structure of remote phosphor for phosphor-converted white LEDs," Opt. Express 19, A930-A936 (2011).
9. H. Menkara, R. A. Gilstrap Jr., T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, "Development of nanophosphors for light emitting diodes," Opt. Express 19, A972-A981 (2011).
10. H. Zhao, J. Zhang, G. Liu, and N. Tansu, "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes," Appl. Phys. Lett. 98, 151115 (2011).
11. 1-xN quantum well device on semipolar (10-1-1) GaN substrate," Appl. Phys. Lett. 98, 191903 (2011).
12. C. Wetzel and T. Detchprohm, "Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency," Opt. Express 19, A962-A971 (2011).
13. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19, A991-A1007 (2011).
14. X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, "Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).
15. J. Zhang, H. Zhao, and N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97, 111105 (2010).
16. J. Zhang, H. Zhao, and N. Tansu, "Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes," Appl. Phys. Lett. 98, 171111 (2011).
17. T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M.Weyers, and M. Kneissl, "Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes," Appl. Phys. Lett. 97, 171105 (2010).
18. xN epitaxial films grown on mplane freestanding GaN substrates toward nonpolar ultraviolet LEDs," Opt. Express 19, A1008-A1021 (2011).
19. J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, "Emission of terahertz radiation from SiC," Appl. Phys. Lett. 95, 051912 (2009).
20. G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, "Silicon carbide terahertz emitting devices,"J. Electron. Mater. 37, 726-729 (2008).
21. M. Mirzaei and M. Mirzaei, "A computational study of atomic oxygen-doped silicon carbide nanotubes,"J. Mol. Model. 17, 527-531 (2011).
22. S. Choudhary and S. Qureshi, "Theoretical study on transport properties of a BN co-doped SiC nanotube,"Phys. Lett. A 375, 3382-3385 (2011).
23. S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, "Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,"J. Appl. Phys. 99, 093108 (2006).
24. Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, "Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,"Opt. Express 19, A166-A172 (2011).
25. M. Syväjärvi and R. Yakimova, "Sublimation epitaxial growth of hexagonal and cubic SiC,"in Encyclopedia- the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
26. D. R. Hamilton, W. J. Choyke, and L. Patrick, "Photoluminescence of nitrogen-exciton complexes in 6H SiC,"Phys. Rev. 131, 127-133 (1963).
27. M. Ikeda, H. Matsunami, and T. Tanaka, "Site effect on the impurity levels in 4H, 6H, and 15R SiC,"Phys. Rev. B 22, 2842-2854 (1980).
28. W. J. Choyke, D. R. Hamilton, and L. Patrick, "Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,"Phys. Rev. 133, 1163-1166 (1964).
29. M. Ohishi, "Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,"Jpn. J. Appl. Phys. 25, 1546-1551 (1986).
30. P. Bäume, F. Kubacki, and J. Gutowski, "Characterization of impurities in II-VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,"J. Cryst. Growth 138, 266-273 (1994).
31. V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, "Carrier lifetimes in fluorescent 6H-SiC for LEDs application,"presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
32. (II) emitters and fabrication of orange polymer light-emitting diodes using solution process,"Adv. Funct. Mater. 18, 183-194 (2008).
33. J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, "White-light generation through ultravioletemitting diode and white-emitting phosphor,"Appl. Phys. Lett. 85, 3696-3698 (2004).
34. X. Li, Z. Chen, and E. Shi, "Effect of doping on the Raman scattering of 6H-SiC crystals,"Physica B 405, 2423-2426 (2010).
35. G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, "Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,"Phys. Status Solidi B 119, 595-603 (1983).
36. H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, "Characterization of the free-carrier concentrations in doped β -SiC crystals by Raman scattering,"J. Appl. Phys. 61, 354-358 (1987).
37. D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, "Resonant optical microcavity based on crystalline silicon active layer,"J. Appl. Phys. 92, 2207-2209 (2002).
38. 2 films,"J. Phys. D: Appl. Phys. 40, 4771-4774 (2007).