MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2163-2166

  Jetter, M ^a   Wachter C ^a   Meyer, A ^a   Michler, P ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

MOVPE growth; Optical characterization; Polarization matching; Quaternary nitride

Indexed keywords

ACTIVE REGIONS; ALINGAN; BARRIER MATERIAL; DEPOSITED MATERIALS; INGAN QW; METAL ORGANIC PRECURSORS; MOVPE GROWTH; OPTICAL CHARACTERIZATION; PHOTOLUMINESCENCE MEASUREMENTS; POLARIZATION MATCHING; QUATERNARY NITRIDE; ROOM TEMPERATURE;

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; POLARIZATION; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960743950     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000999     Document Type: Article

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