Fluorescent SiC as a new material for white LEDs

Physica Scripta

Volumn , Issue T148, 2012, Pages

  Syvajarvi M ^a   Muller J ^b   Sun, Jw ^a   Grivickas, V ^c   Ou, Y ^d   Jokubavicius, V ^a   Hens, P ^a,b   Kaisr, M ^b   Ariyawong, K ^a   Gulbinas, K ^c   Liljedahl, R ^a   Linnarsson, M K ^e   Kamiyama, S ^f   Wellmann, P ^b   Spiecker, E ^b   Ou, H ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c VILNIUS UNIVERSITY   (Lithuania)

^d TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^f MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED; ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY; BORON CONCENTRATIONS; BORON-DOPING; DOPED LAYERS; EPITAXIAL RELATIONS; GROWTH MECHANISMS; HIGH CURRENTS; LED DEVICE; LUMINESCENCE BAND; PAIR RECOMBINATION; PHOTOLUMINESCENCE INTENSITIES; RARE-EARTH METALS; ROOM TEMPERATURE; STEP BUNCHING; WHITE LED; WHITE LIGHT EMITTING DIODES; YELLOW PHOSPHORS;

BORON; FLUORESCENCE; LIGHT EMISSION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 84862068177     PISSN: 00318949     EISSN: 14024896     Source Type: Journal    
DOI: 10.1088/0031-8949/2012/T148/014002     Document Type: Article

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