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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 499-502

Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN

(4) Miyagawa, Reina a Yang, Shibo a Miyake, Hideto a Hiramatsu, Kazumasa a

a MIE UNIVERSITY (Japan)

Author keywords

AlN; MOVPE; Nitrides; Sapphire

Indexed keywords

ALN; ALN LAYERS; ALN-LAYER GROWN; ATOMIC LEVELS; CARRIER GAS; COMPRESSIVE STRAIN; CRACK FREE; DEEP-ULTRAVIOLET REGIONS; GROWTH CONDITIONS; HIGH QUALITY; HIGH TEMPERATURE; MEDIUM TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE GROWTH; RADIUS OF CURVATURE; SAPPHIRE SUBSTRATES; SMOOTH SURFACE; STRONG DEMAND; SURFACE MIGRATION;

ADSORPTION; GROWTH TEMPERATURE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE;

GASES;

EID: 84858962694 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201100712 Document Type: Article

Times cited : (17)

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