Effect of growth temperature on structure properties of InN grown by pressurized-reactor metalorganic vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 482-484

  Zhang, Yuantao ^a,b   Liu, Yuhuai ^a,b   Kimura, Takeshi ^a,b   Hirata, Masaki ^a   Prasertusk, Kiattiwut ^a   Ji, Shiyang ^a   Katayama, Ryuji ^a,b   Matsuoka, Takashi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Growth temperature; InN; MOVPE; Pressurized reactor

Indexed keywords

CONTINUOUS FILMS; CRYSTALLINE QUALITY; DIFFRACTION PEAKS; GROWTH CONDITIONS; GROWTH PRESSURE; HIGH GROWTH TEMPERATURES; HIGH-NITROGEN; INN; INN FILMS; METAL-ORGANIC VAPOR PHASE EPITAXY; METALLIC INDIUM; MOVPE; PRESSURIZED-REACTOR; STRUCTURE PROPERTY; SURFACE MIGRATION; XRD SPECTRA;

COALESCENCE; EPITAXIAL FILMS; EPITAXIAL GROWTH; GROWTH TEMPERATURE; INDIUM; MORPHOLOGY; ORGANOMETALLICS; PRESSURE EFFECTS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79951694924     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000464     Document Type: Article

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