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Volumn 14, Issue 6, 2011, Pages

H2O-assisted O2 adsorption in sol-gel derived amorphous indium gallium zinc oxide thin film transistors

(7) Chung, Wan Fang a Chang, Ting Chang b,c Li, Hung Wei a Chen, Shih Ching b Chen, Yu Chun b Tseng, Tseung Yuen a Tai, Ya Hsiang a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED WATER; BACK CHANNELS; DEVICE CHARACTERISTICS; ENVIRONMENTAL EFFECTS; GAS PARTIAL PRESSURE; INDIUM GALLIUM ZINC OXIDES; OFF-CURRENT; ON-CURRENTS; OXYGEN MOLECULE; THERMAL-ANNEALING; VACUUM CONDITION;

AMORPHOUS FILMS; GALLIUM; GAS ADSORPTION; GELS; INDIUM; OXYGEN; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; WATER VAPOR; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79953780123 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3568831 Document Type: Article

Times cited : (20)

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