SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 159, Issue 1, 2012, Pages

Thermal stability of ALD-HfO 2GaAs pretreated with trimethylaluminium

(5) Byun, Young Chul a An, Chee Hong a Lee, Seok Hee b Cho, Mann Ho c Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; FREQUENCY DISPERSION; GA-O BONDS; GAAS; GAAS SUBSTRATES; INTERFACIAL CHARACTERISTICS; OPTIMAL NUMBER; OUT-DIFFUSION; POST DEPOSITION ANNEALING; PRE-TREATMENT; TRIMETHYLALUMINIUM;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; GALLIUM; GALLIUM ARSENIDE; THERMODYNAMIC STABILITY; DEPOSITION; HAFNIUM OXIDES;

HAFNIUM OXIDES; ATOMIC LAYER DEPOSITION;

EID: 84863180202 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.052201jes Document Type: Article

Times cited : (9)

References (20)

1
- 0031075990
- 10.1109/16.557709
- M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. R. Kwo, IEEE Trans. Electron Devices, 44, 214 (1997). 10.1109/16.557709
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 214
- Passlack, M.¹ Hong, M.² Mannaerts, J.P.³ Opila, R.L.⁴ Chu, S.N.G.⁵ Moriya, N.⁶ Ren, F.⁷ Kwo, J.R.⁸

2
- 60749136099
- 10.1063/1.3079409
- G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, and D. Z. Chi, Appl. Phys. Lett., 94, 073502 (2009). 10.1063/1.3079409
- (2009) Appl. Phys. Lett. , vol.94 , pp. 073502
- Dalapati, G.K.¹ Sridhara, A.² Wong, A.S.W.³ Chia, C.K.⁴ Chi, D.Z.⁵

3
- 69249185908
- 10.1557/mrs2009.137
- R. M. Wallace, P. C. McIntyre, J. Kim, and Y. Nishi, MRS Bull., 34, 493 (2009). 10.1557/mrs2009.137
- (2009) MRS Bull. , vol.34 , pp. 493
- Wallace, R.M.¹ McIntyre, P.C.² Kim, J.³ Nishi, Y.⁴

4
- 75649140552
- 10.1021/cr900056b
- S. M George, Chem. Rev., 110, 111 (2010). 10.1021/cr900056b
- (2010) Chem. Rev. , vol.110 , pp. 111
- George, S.M.¹

5
- 39749157907
- GaAs interfacial self-cleaning by atomic layer deposition
- DOI 10.1063/1.2883956
- C. L Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett., 92, 071901 (2008). 10.1063/1.2883956 (Pubitemid 351304840)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

6
- 66749167599
- 10.1063/1.3148723
- H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, and E. Garfunkel, Appl. Phys. Lett., 94, 222108 (2009). 10.1063/1.3148723
- (2009) Appl. Phys. Lett. , vol.94 , pp. 222108
- Lee, H.D.¹ Feng, T.² Yu, L.³ Mastrogiovanni, D.⁴ Wan, A.⁵ Gustafsson, T.⁶ Garfunkel, E.⁷

7
- 34547895938
- Simplified surface preparation for GaAs passivation using atomic layer-deposited high- dielectrics
- DOI 10.1109/TED.2007.900678
- Y. Xuan, H.-C. Lin, and P. D. Ye, IEEE Trans. Electron Devices, 54, 1811 (2007). 10.1109/TED.2007.900678 (Pubitemid 47260256)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.8 , pp. 1811-1817
- Xuan, Y.¹ Lin, H.-C.² Ye, P.D.³

8
- 39349086978
- 2S passivated (100) GaAs grown by atomic layer deposition
- DOI 10.1063/1.2838471
- P. T. Chen, Y. Sun, E. Kim, P. C. McIntyre, W. Tsai, M. Garner, P. Pianetta, Y. Nishi, and C. O. Chui, J. Appl. Phys., 103, 034106 (2008). 10.1063/1.2838471 (Pubitemid 351263949)
- (2008) Journal of Applied Physics , vol.103 , Issue.3 , pp. 034106
- Chen, P.T.¹ Sun, Y.² Kim, E.³ McIntyre, P.C.⁴ Tsai, W.⁵ Garner, M.⁶ Pianetta, P.⁷ Nishi, Y.⁸ Chui, C.O.⁹

9
- 34948821305
- Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited Hf O2 Al2 O3 nanolaminate gate dielectric
- DOI 10.1063/1.2798499
- T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y. Q. Wu, J. M. Woodall, P. D. Ye, F. S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R. M. Wallace, Appl. Phys. Lett., 91, 142122 (2007). 10.1063/1.2798499 (Pubitemid 47531521)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 142122
- Yang, T.¹ Xuan, Y.² Zemlyanov, D.³ Shen, T.⁴ Wu, Y.Q.⁵ Woodall, J.M.⁶ Ye, P.D.⁷ Aguirre-Tostado, F.S.⁸ Milojevic, M.⁹ Mcdonnell, S.¹⁰ Wallace, R.M.¹¹

10
- 78951478114
- 10.1149/1.3516615
- D. C. Suh, Y. D. Cho, D.-H. Ko, Y. Lee, K. B. Chung, and M.-H. Cho, Electrochem. Solid-State. Lett., 14, H63 (2011) 10.1149/1.3516615
- (2011) Electrochem. Solid-State. Lett. , vol.14 , pp. 63
- Suh, D.C.¹ Cho, Y.D.² Ko, D.-H.³ Lee, Y.⁴ Chung, K.B.⁵ Cho, M.-H.⁶

11
- 77951198414
- 10.1063/1.3377915
- D. C. Suh, Y. D. Cho, S. W. Kim, D.-H. Ko, Y. Lee, M.-H. Cho, and J. Oh, Appl. Phys. Lett., 96, 142112 (2010). 10.1063/1.3377915
- (2010) Appl. Phys. Lett. , vol.96 , pp. 142112
- Suh, D.C.¹ Cho, Y.D.² Kim, S.W.³ Ko, D.-H.⁴ Lee, Y.⁵ Cho, M.-H.⁶ Oh, J.⁷

12
- 77949736209
- 10.1063/1.3357422
- R. Suri, D. J. Lichtenwalner, and V. Misra, Appl. Phys. Lett., 96, 112905 (2010). 10.1063/1.3357422
- (2010) Appl. Phys. Lett. , vol.96 , pp. 112905
- Suri, R.¹ Lichtenwalner, D.J.² Misra, V.³

13
- 77951176435
- 10.1149/1.3353166
- T. Gougousi, J. C. Hackley, J. D. Demaree, and J. W. Lacis, J. Electrochem. Soc., 157, H551 (2010). 10.1149/1.3353166
- (2010) J. Electrochem. Soc. , vol.157 , pp. 551
- Gougousi, T.¹ Hackley, J.C.² Demaree, J.D.³ Lacis, J.W.⁴

14
- 56249143080
- 10.1063/1.2996261
- C. Y. Kim, S. W. Cho, M.-H. Cho, K. B Chung, C.-H. An, H. Kim, H. J. Lee, and D.-H. Ko, Appl. Phys. Lett., 93, 192902 (2008). 10.1063/1.2996261
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192902
- Kim, C.Y.¹ Cho, S.W.² Cho, M.-H.³ Chung, K.B.⁴ An, C.-H.⁵ Kim, H.⁶ Lee, H.J.⁷ Ko, D.-H.⁸

15
- 77953018514
- 10.1063/1.3432749
- A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace, Appl. Phys. Lett., 96, 202905 (2010). 10.1063/1.3432749
- (2010) Appl. Phys. Lett. , vol.96 , pp. 202905
- Kirk, A.P.¹ Milojevic, M.² Kim, J.³ Wallace, R.M.⁴

16
- 67349114865
- 10.1016/j.mee.2009.03.090
- M. Caymax, G. Brammertz, A. Delabie, S. Sioncke, D. Lin, M. Scarrozza, G. Pourtois, W.-E. Wang, M. Meuris, and M. Heyns, Microelectron. Eng., 86, 1529 (2009). 10.1016/j.mee.2009.03.090
- (2009) Microelectron. Eng. , vol.86 , pp. 1529
- Caymax, M.¹ Brammertz, G.² Delabie, A.³ Sioncke, S.⁴ Lin, D.⁵ Scarrozza, M.⁶ Pourtois, G.⁷ Wang, W.-E.⁸ Meuris, M.⁹ Heyns, M.¹⁰

17
- 79955545799
- 10.1149/1.3569751
- Y.-C. Byun, C.-H. An, J. Y. Choi, C. Y. Kim, M.-H. Cho, and H. Kim, J. Electrochem. Soc., 158, G141 (2011). 10.1149/1.3569751
- (2011) J. Electrochem. Soc. , vol.158 , pp. 141
- Byun, Y.-C.¹ An, C.-H.² Choi, J.Y.³ Kim, C.Y.⁴ Cho, M.-H.⁵ Kim, H.⁶

18
- 36048932797
- 2 gate dielectric: Fabrication and characterization
- DOI 10.1063/1.2806190
- D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, Appl. Phys. Lett., 91, 193503 (2007). 10.1063/1.2806190 (Pubitemid 350097923)
- (2007) Applied Physics Letters , vol.91 , Issue.19 , pp. 193503
- Shahrjerdi, D.¹ Garcia-Gutierrez, D.I.² Akyol, T.³ Bank, S.R.⁴ Tutuc, E.⁵ Lee, J.C.⁶ Banerjee, S.K.⁷

19
- 34547912197
- Electrical and interfacial characterization of atomic layer deposited high gate dielectrics on GaAs for advanced CMOS devices
- DOI 10.1109/TED.2007.901261
- G. K. Dalapati, Y. Tong, W.-Y. Loh, H. K. Mun, and B. J. Cho, IEEE Trans. Electron Devices, 54, 1831 (2007). 10.1109/TED.2007.901261 (Pubitemid 47260257)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.8 , pp. 1831-1837
- Dalapati, G.K.¹ Tong, Y.² Loh, W.-Y.³ Mun, H.-K.⁴ Cho, B.J.⁵

20
- 0036863349
- 10.1109/LED.2002.805000
- W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett., 23, 649 (2002). 10.1109/LED.2002.805000
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 649
- Zhu, W.J.¹ Tamagawa, T.² Gibson, M.³ Furukawa, T.⁴ Ma, T.P.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.