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Volumn 14, Issue 7, 2011, Pages

Improved electrical properties of HfO2-based gate dielectrics on InP substrate using Al2O3/HfO2 and SF 6 plasma treatment

(6) Wang, Yanzhen a Chen, Yen Ting a Zhao, Han a Xue, Fei a Zhou, Fei a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BI-LAYER; GATE OXIDE LAYERS; INP SUBSTRATES; LOW POWER; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; OXIDE INTERFACES; PLASMA TREATMENT; SUBTHRESHOLD SWING;

ALUMINUM; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HAFNIUM OXIDES; MOS DEVICES; PLASMA APPLICATIONS; PLASMAS; SULFUR HEXAFLUORIDE;

GATE DIELECTRICS;

EID: 79959560579 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3582939 Document Type: Article

Times cited : (18)

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