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Journal of Alloys and Compounds

Volumn 581, Issue , 2013, Pages 289-292

Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector

(6) Bao, Xichang a,b Xu, Jintong b Li, Chao b Qiao, Hui b Zhang, Yan b Li, Xiangyang b

a QINGDAO INSTITUTE OF BIOENERGY AND BIOPROCESS TECHNOLOGY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

Deep level centers; GaN; Ion implantation; Negative differential capacitance; Photodetector

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTODETECTORS; PHOTONS; TEMPERATURE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); CARRIER CONFINEMENTS; DEEP LEVEL CENTERS; DIFFERENTIAL CAPACITANCE; EXTERNAL QUANTUM EFFICIENCY; FREQUENCY DEPENDENCE; HIGH-DOSE ION IMPLANTATION; VOLTAGE CHARACTERISTICS;

CAPACITANCE;

EID: 84881128118 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2013.07.098 Document Type: Article

Times cited : (21)

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