Low-noise back-illuminated AlxGa1-xN-based p-i-n solar-blind ultraviolet photodetectors

IEEE Journal of Quantum Electronics

Volumn 37, Issue 4, 2001, Pages 538-545

  Li, T ^a   Lambert, D J H ^a   Wong, M M ^a   Collins, C J ^a   Yang, B ^a   Beck, A L ^a   Chowdhury, U ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

AlGaN; p i n photodiode; Photodetector

Indexed keywords

ACTIVATION ENERGY; CRACKS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; IONIZATION; PHOTOCURRENTS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; TIME DOMAIN ANALYSIS;

ALUMINUM GALLIUM NITRIDE; DARK CURRENT; FRONT-ILLUMINATION CONFIGURATION; LATTICE MISMATCHES; SOLAR-BLIND ULTRAVIOLET PHOTODETECTOR; TIME DOMAIN PULSE RESPONSE MEASUREMENT;

PHOTODIODES;

EID: 0035310903     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.914403     Document Type: Article

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