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Volumn 151, Issue 5, 2011, Pages 356-359
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Negative differential capacitance in n-GaN/p-Si heterojunctions
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Author keywords
A. GaN; B. MBE; C. Negative differential capacitance; D. Heterojunctions
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Indexed keywords
A. GAN;
B. MBE;
C. NEGATIVE DIFFERENTIAL CAPACITANCE;
CURRENT VOLTAGE;
D. HETEROJUNCTIONS;
DIFFERENTIAL CAPACITANCE;
LOW FREQUENCY;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
QUANTUM STATE;
SPACE-CHARGE-LIMITED CURRENT;
TESTING FREQUENCIES;
CAPACITANCE;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
HETEROJUNCTIONS;
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EID: 79551570613
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2010.12.023 Document Type: Article |
Times cited : (14)
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References (20)
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