Frequency dependence of junction capacitance of GaN p-i-n UV detectors

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1135-1139

  Kang, Yong ^a   Xu, Yunhua ^a   Zhao, Degang ^b   Fang, Jiaxiong ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Capacitance frequency characteristics; Deep level; GaN; UV detector

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS;

DEEP LEVEL; GAN; SCHIBLI-MILNES MODEL; SPACE CHARGE REGION (SCR);

ULTRAVIOLET DETECTORS;

EID: 21444433634     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.05.001     Document Type: Article

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