Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD

Journal of Alloys and Compounds

Volumn 506, Issue 2, 2010, Pages 615-619

  Suresh, S ^a   Balaji, M ^a   Ganesh, V ^a   Baskar, K ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

Barrier height; Defects; GaN; Leakage current; Schottky diode

Indexed keywords

AS-GROWN; BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTION MECHANISM; CURRENT VOLTAGE; DEVICE CHARACTERISTICS; DEVICE PARAMETERS; GAN; HOPPING CONDUCTION; IDEALITY FACTORS; MOCVD; NON-IDEALITIES; REVERSE LEAKAGE CURRENT; SCHOTTKY DIODES; SMALL AREA; STRUCTURAL CHANGE; TRAP ASSISTED TUNNELING; V/III RATIO;

CARRIER CONCENTRATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

LEAKAGE (FLUID);

EID: 77956483908     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.06.076     Document Type: Article

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