Rapid prediction of rram reset-state disturb by ramped voltage stress

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 597-599

  Luo, Wun Cheng ^a   Lin, Kuan Liang ^a   Huang, Jiun Jia ^a   Lee, Chung Lun ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Read disturb; reliability; resistive switching; resistive switching random access memory (RRAM); voltage acceleration model

Indexed keywords

ACCELERATION MODELS; AREA SCALING; CONSTANT VOLTAGE METHOD; HIGH CONFIDENCE; LINEAR VOLTAGE RAMP; NOVEL TECHNIQUES; QUANTITATIVE LINKS; RAMP RATES; RAMPED VOLTAGE STRESS; RANDOM ACCESS MEMORIES; READ DISTURB; RESISTIVE SWITCHING; RESISTIVE-SWITCHING RANDOM ACCESS MEMORY (RRAM); STATE-BASED; STATISTICAL DISTRIBUTION; VOLTAGE ACCELERATION; VOLTAGE ACCELERATION MODEL;

DIELECTRIC MATERIALS; RELIABILITY; RELIABILITY ANALYSIS;

RANDOM ACCESS STORAGE;

EID: 84862807684     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2185838     Document Type: Article

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