High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric

Thin Solid Films

Volumn 520, Issue 16, 2012, Pages 5455-5458

  Chiu, C J ^a   Chang, S P ^a   Chang, S J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

a IGZO; High mobility; Polymer

Indexed keywords

A-IGZO; AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); CURRENT RATIOS; ELECTRONIC APPLICATION; GLASS SUBSTRATES; HIGH MOBILITY; INTERFACE STATE DENSITY; NONVOLATILE MEMORY DEVICES; POLY(4-VINYLPHENOL); POLYMER GATE DIELECTRICS; SPIN COATED POLYMERS; SUBTHRESHOLD SWING;

GALLIUM; GATE DIELECTRICS; INDIUM; NONVOLATILE STORAGE; SUBSTRATES; THIN FILM TRANSISTORS; ZINC OXIDE;

POLYMERS;

EID: 84861750790     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.101     Document Type: Article

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