Amorphous indium-gallium-zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model

Solid-State Electronics

Volumn 73, Issue , 2012, Pages 74-77

  Shih, Tsung Hsiang ^a   Fang, Shou Wei ^a   Lee, Jen Yu ^a   Lin, Guan Yu ^a   Chen, Yu Hung ^a   Hsin, Lung Pao ^a   Li, Hsin Hung ^a   Yang, Chin Wei ^a   Chen, Chien Tao ^a   Lu, Hsiung Hsing ^a   Cheng, Kai Chung ^a   Lin, Chih Yuan ^a   Chen, Chia Yu ^a   Yang, Chun Ming ^a   Tsai, He Ting ^a   Lin, Yu Hsin ^a  

^a AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

IGZO; S E model; Stability; TFTs; TiO 2

Indexed keywords

ACTIVE MATRIXES; ETCH-STOP LAYERS; IGZO; INDIUM GALLIUM ZINC OXIDES (IGZO); OXYGEN ATOM; SOURCE/DRAIN ELECTRODES; STRESS EVALUATIONS; TFTS; THRESHOLD VOLTAGE SHIFTS; TIO; TITANIUM OXIDE LAYER; TRANSFER CHARACTERISTICS;

CONVERGENCE OF NUMERICAL METHODS; GALLIUM; INDIUM; LIQUID CRYSTAL DISPLAYS; LIQUIDS; OXYGEN; STABILITY; TITANIUM; TITANIUM DIOXIDE; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84861795585     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.001     Document Type: Article

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