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Volumn 98, Issue 6, 2011, Pages

Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

(10) Kwon, Dae Woong a Kim, Jang Hyun a Chang, Ji Soo a Kim, Sang Wan a Kim, Wandong a Park, Jae Chul b Song, Ihun b Kim, Chang Jung b Jung, U In b Park, Byung Gook a

a Seoul National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; DOMINANT FACTOR; GATE INSULATOR; GATE METALS; INDIUM ZINC OXIDES; NEGATIVE BIAS; NEGATIVE GATE; TEMPERATURE EFFECTS; TEMPERATURE-INDUCED EFFECTS;

AMORPHOUS FILMS; HAFNIUM; INDIUM; THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79951778017 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549180 Document Type: Article

Times cited : (18)

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