Wideband impedance model for coaxial through-silicon vias in 3-D integration

IEEE Transactions on Electron Devices

Volumn 60, Issue 8, 2013, Pages 2498-2504

  Liang, Feng ^a   Wang, Gaofeng ^b,c   Zhao, Deshuang ^a   Wang, Bing Zhong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b WUHAN UNIVERSITY   (China)

^c HANGZHOU DIANZI UNIVERSITY   (China)

Author keywords

3 D integration; coaxial through silicon via (TSV); eddy current; equivalent circuit model; skin effect; wideband

Indexed keywords

3-D INTEGRATION; EQUIVALENT CIRCUIT MODEL; ISOLATION DIELECTRICS; SKIN EFFECT IN METALS; SURROUNDING ENVIRONMENT; THROUGH-SILICON VIA; WIDE BAND FREQUENCIES; WIDE-BAND;

CIRCUIT SIMULATION; CIRCUIT THEORY; EDDY CURRENTS; ELECTROMAGNETIC COMPATIBILITY; ELECTRONICS PACKAGING; INTEGRATION; SILICON; SKIN EFFECT;

THREE DIMENSIONAL;

EID: 84880920937     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2268869     Document Type: Article

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