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Volumn 50, Issue 4, 2002, Pages 1127-1136

Device-level simulation of wave propagation along metal-insulator-semiconductor interconnects

Author keywords

Boundary layer problem; Device level simulation; Electromagnetic analysis; Field carrier interactions; Finite element method; MIS interconnects; Semiconductor nonlinearity and loss; Slow wave effect

Indexed keywords

BOUNDARY LAYER PROBLEM; DEVICE LEVEL SIMULATION; ELECTROMAGNETIC ANALYSIS; FIELD CARRIER INTERACTIONS; METAL INSULATOR SEMICONDUCTOR INTERCONNECTS; SEMICONDUCTOR NONLINEARITY; SLOW WAVE EFFECT;

EID: 0036540101     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.993416     Document Type: Article
Times cited : (19)

References (26)
  • 26
    • 4243896037 scopus 로고    scopus 로고
    • Coupled electromagnetic and device level investigations of metal-insulator-semiconductor interconnects
    • Ph.D. dissertation, Dept. Sci. Comput., Stanford Univ., Stanford, CA
    • (2001)
    • Wang, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.