Device level modeling of metal-insulator-semiconductor interconnects

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1672-1682

  Wang, Gaofeng ^a,b   Qi, Xiaoning ^a,b   Yu, Zhiping ^a,b   Dutton, Robert W ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

Device level simulation; Electromagnetic analysis; Electronic controllability; Equivalent transmission line model; Field carrier interactions; MIS interconnects; Semiconductor nonlinearity; Substrate loss

Indexed keywords

DEVICE LEVEL SIMULATION; ELECTROMAGNETIC ANALYSIS; ELECTRONIC CONTROLLABILITY; EQUIVALENT TRANSMISSION LINE MODEL; FIELD CARRIER INTERACTIONS; METAL INSULATOR SEMICONDUCTOR INTERCONNECTS; SEMICONDUCTOR NONLINEARITY; SUBSTRATE LOSS;

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD EFFECTS; EQUATIONS OF MOTION; EQUIVALENT CIRCUITS; FINITE ELEMENT METHOD; INTERCONNECTION NETWORKS; MAXWELL EQUATIONS; SEMICONDUCTOR DEVICE MODELS; TRANSMISSION LINE THEORY; TUNING;

MIS DEVICES;

EID: 0035424354     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936590     Document Type: Article

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