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Volumn 6, Issue 5, 2013, Pages

Effects of sulfur passivation on GaSb metal-oxide-semiconductor capacitors with neutralized and unneutralized (NH4)2S solutions of varied concentrations

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SULFUR PASSIVATION;

EID: 84880856742     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.056502     Document Type: Article
Times cited : (24)

References (21)
  • 21
    • 84880866849 scopus 로고    scopus 로고
    • ed. A. A. Demkov and A. Navrotsky ( Springer, Heidelberg
    • R. Liu: in Materials Fundamentals of Gate Dielectrics, ed. A. A. Demkov and A. Navrotsky (Springer, Heidelberg, 2005) p. 23.
    • (2005) Materials Fundamentals of Gate Dielectrics , pp. 23
    • Liu, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.