Capacitance-voltage characterization of La2O3 metal-oxide-semiconductor structures on In0.53Ga0.47As substrate with different surface treatment methods

Japanese Journal of Applied Physics

Volumn 50, Issue 10 PART 2, 2011, Pages

  Zade, Dariush ^a   Kanda, Takashi ^a   Yamashita, Koji ^b   Kakushima, Kuniyuki ^a   Nohira, Hiroshi ^b   Ahmet, Parhat ^a   Tsutsui, Kazuo ^a   Nishiyama, Akira ^a   Sugii, Nobuyuki ^a   Natori, Kenji ^a   Hattori, Takeo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; FORMING GAS ANNEALING; FREQUENCY DISPERSION; HEXAMETHYLDISILAZANE; INTERFACE PROPERTY; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS INTERFACE; OXIDE REMOVAL; SURFACE PASSIVATION;

CAPACITANCE; DIELECTRIC DEVICES; HYDROFLUORIC ACID; LANTHANUM OXIDES; MOS CAPACITORS; OPTIMIZATION; PASSIVATION; PHASE INTERFACES; SEMICONDUCTING INDIUM;

SURFACE TREATMENT;

EID: 80054880637     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.10PD03     Document Type: Article

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