Improvement of the GaSb/Al 2O 3 interface using a thin InAs surface layer

Solid-State Electronics

Volumn 78, Issue , 2012, Pages 56-61

  Greene, Andrew ^a   Madisetti, Shailesh ^a   Nagaiah, Padmaja ^a   Yakimov, Michael ^a   Tokranov, Vadim ^a   Moore, Richard ^a   Oktyabrsky, Serge ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Al 2O 3; GaSb; InAs passivation; Interface trap states; MOSCAP

Indexed keywords

AMMONIUM SULFIDE; BULK TRAPS; CLEANING PROCESS; FORMING GAS; GASB; GATE STACKS; HIGH DENSITY; HIGH-K OXIDES; INAS; INTERFACE TRAP DENSITY; INTERFACE TRAP STATE; MINORITY CARRIER GENERATION; MOSCAP; NATIVE OXIDES; OXIDE INTERFACES; PRECLEANING; PROCESSING TEMPERATURE; SUBTHRESHOLD; SURFACE LAYERS; THERMALLY UNSTABLE; TRIMETHYLALUMINUM/WATER;

AMMONIUM COMPOUNDS; ATOMIC LAYER DEPOSITION; GALLIUM ALLOYS; HAFNIUM OXIDES; INDIUM ARSENIDE; PASSIVATION; PHASE INTERFACES;

INTERFACE STATES;

EID: 84866061906     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.05.049     Document Type: Conference Paper

References (16)

1. S. Oktyabrsky S. Oktyabrsky, P. Ye, Fundamentals of compound semiconductor MOSFETs 2010 Springer New York 349 378
2. A. Nainani, T. Irisawa, Z. Yuan, Y. Sun, T. Krishnamohan, and M. Reason IEDM tech digest 6 2010 4
3. É. O'Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, and S.B. Newcomb J Appl Phys 109 2011 024101
4. H. Lin, S. Wu, C. Cheng, C. Ko, C. Wann, and Y. Lin Appl Phys Lett 98 2011 123509
5. S. Koveshnikov, W. Tsai, I. Ok, J.C. Lee, V. Torkanov, and M. Yakimov Appl Phys Lett 88 2006 273 276
6. V. Tokranov, P. Nagaiah, M. Yakimov, R.J. Matyi, and S. Oktyabrsky J Cryst Growth 323 2011 35 38
7. E. Kim, L. Wang, P.M. Asbeck, K.C. Saraswat, and P.C. McIntyre Appl Phys Lett 96 2010 012906
8. H. Chin, M. Zhu, C. Tung, G.S. Samudra, and Y. Yeo IEEE Electr Dev Lett 29 2008 553 556
9. R. Engel-Herbert, Y. Hwang, and S. Stemmer J Appl Phys 108 2010 124101
10. L.M. Terman Solid-State Electron 5 1962 285 299
11. E.H. Nicollian, and J.R. Brews Metal oxide semiconductor physics and technology 1st ed. 1982 Wiley New York
12. C. Wang, M. Xu, J. Gu, D.W. Zhang, and P.D. Ye Electrochem Solid-State Lett 15 2012 H51 H54
13. A. Ali, H.S. Madan, A.P. Kirk, D.A. Zhao, D.A. Mourey, and M.K. Hudait Appl Phys Lett 97 2010 143502
14. C. Merckling, X. Sun, A. Alian, G. Brammertz, V.V. Afanas'ev, and T.Y. Hoffmann J Appl Phys 109 2011 073719
15. B. Brennan, M. Milojevic, C.L. Hinkle, F.S. Aguirre-Tostado, G. Hughes, and R.M. Wallace Appl Surf Sci 257 2011 4082 4090
16. A. Nainani, Z. Yuan, T. Krishnamohan, B.R. Bennett, J.B. Boos, and M. Reason J Appl Phys 110 2011 014503