Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Kim, Hyoung Sub ^a   Ok, Injo ^a   Zhang, Manhong ^a   Choi, Changhwan ^a   Lee, Tackhwi ^a   Zhu, Feng ^a   Thareja, Gaurav ^a   Yu, Lu ^a   Lee, Jack C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CURRENT DENSITY; DIELECTRIC FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; PASSIVATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EQUIVALENT OXIDE THICKNESS (EOT); INTERFACIAL CONTROL LAYER (ICL); METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POSTDEPOSITION ANNEALING (PDA);

HAFNIUM COMPOUNDS;

EID: 33745434697     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216023     Document Type: Article

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