Metal oxide semiconductor device studies of molecular-beam-deposited Al 2O 3/InP heterostructures with various surface orientations (001), (110), and (111)

Applied Physics Express

Volumn 5, Issue 6, 2012, Pages

  Chu, Lung Kun ^a,b,c   Merckling, Clement ^c   Dekoster, Johan ^c   Kwo, Jueinai Raynien ^a,d   Hong, Minghwei ^d   Caymax, Matty ^c   Heyns, Marc ^b,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTANCE MEASUREMENT; CONDUCTION BAND EDGE; ENERGY DISTRIBUTIONS; FREQUENCY DISPERSION; IN-SITU; INP; INTERFACIAL LAYER; INTERFACIAL QUALITIES; INTERFACIAL TRAPS; SURFACE ORIENTATION;

MOLECULAR BEAMS;

ALUMINUM;

EID: 84862582799     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.061202     Document Type: Article

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